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Vishay N-Channel MOSFET 150 A, 80 V, Enhancement Mode, TO-220 Package, 3-Pin SUP60020E-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.51mm |
| Model | SUP60020E-GE3 |
| Width | 4.65mm |
| Mount Type | Through Hole |
| Series | SUP60020E |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 150A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 2.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 151.2nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Enhancement mode with trenchFET® technology for efficient switching.
- Maximum power dissipation of 375 watts supports high power applications.
- Low maximum drain-source resistance of 2.8 milliohms reduces conduction losses.
- Wide operating temperature range from -55°C to 175°C ensures reliability.
- Typical gate charge of 151.2 nC for fast switching performance.
- Max gate-source voltage of ±20 V enables robust gate drive.
- Through-hole mount type allows easy PCB installation and mechanical stability.
- Forward voltage drop of 1.5 V minimizes power loss in conduction mode.
Product Description
Vishay SUP60020E-GE3 is a high-performance N-Channel MOSFET designed for power electronics applications requiring robust current handling and high voltage tolerance. This enhancement mode device can conduct continuous drain currents up to 150 A and withstands drain-source voltages up to 80 V. It is housed in a standard TO-220 package with three pins, suitable for through-hole mounting in industrial and commercial circuits.
Utilizing Vishay’s trenchFET® technology, the SUP60020E-GE3 offers low on-resistance (2.8 mΩ) which significantly reduces conduction losses and improves overall efficiency. It supports a maximum power dissipation of 375 W, allowing it to operate at high power levels effectively.
The device can reliably function in a broad temperature range from -55°C to 175°C junction temperature, making it ideal for demanding environments such as automotive, industrial power supplies, and motor control. Its maximum gate-source voltage tolerance is ±20 V with a typical gate charge of just 151.2 nC, facilitating fast switching and low gate drive losses.
Physical dimensions are compact, with a height of 9.01 mm, length of 10.51 mm, and width of 4.65 mm, packaged in TO-220, supporting easy integration into PCBs via through-hole mounting. Its forward voltage drop of 1.5 V contributes to higher efficiency in switching applications.
Enhancement mode N-Channel MOSFET using trenchFET® technology. High continuous drain current capacity of 150 A and 80 V max voltage. Low Rds(on) of 2.8 mΩ reduces conduction losses. High power dissipation rating of 375 W supports industrial workloads.
Wide operating temperature range from -55°C up to 175°C. Typical gate charge of 151.2 nC allows efficient gate drive. Robust maximum gate-source voltage of ±20 V. Compact TO-220 package with three pins for through-hole mounting.
Applications include industrial power electronics, automotive, and motor drives.
This MOSFET is ideal for use in power supplies, inverter circuits, and all applications requiring a robust high-current switching device with high efficiency. With Vishay’s trusted quality and performance, the SUP60020E-GE3 offers reliable operation and long-term durability in industrial and commercial electronics.
Explore more Vishay MOSFETs and power semiconductor solutions in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 150 A.
It has a maximum drain-source voltage rating of 80 V.
This MOSFET supports a maximum power dissipation of 375 W.
The typical gate charge for this model is 151.2 nC.
The maximum gate-source voltage tolerance is ±20 V.
The dimensions of the TO-220 package are 9.01 mm in height, 10.51 mm in length, and 4.65 mm in width.
The maximum drain-source resistance (Rds(on)) is 2.8 mΩ, which helps reduce conduction losses.
It can operate in a wide temperature range from -55°C to 175°C.
This model utilizes a through-hole mount type for easy PCB installation.
This MOSFET is suitable for applications in industrial power electronics, automotive, and motor drives.
The forward voltage drop is 1.5 V, which minimizes power loss in conduction mode.
It utilizes Vishay’s trenchFET® technology for efficient switching performance.
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