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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 900μm |
| Length | 3.4mm |
| Model | PSMN011-60MSX |
| Width | 2.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 61A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 24.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 91W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | 20V |
Nexperia PSMN011-60MSX is an N-Channel enhancement mode MOSFET designed for robust and efficient switching in industrial, communication, and domestic electronic equipment. With a maximum continuous drain current of 61 A and a maximum drain-source voltage of 60 V, this device is optimized for handling power in compact surface mount packages.
The 4-pin LFPAK package, measuring 3.4 mm in length, 2.7 mm in width, and 900 μm in height, provides a footprint compatible with other 3.3 mm types, enabling easy integration into high-density PCB designs.
Operating temperature range from -55°C to 175°C assures performance stability under demanding conditions. The device features a low maximum drain-source resistance of 24.4 mΩ which reduces conduction losses and improves system efficiency.
Its maximum gate-source voltage is 20 V, suitable for standard gate drive levels, with a typical gate charge of 23 nC facilitating fast switching performance.
This MOSFET has a maximum power dissipation rating of 91 W, making it well-suited for power-critical applications such as AC-to-DC converters, synchronous rectification, and DC-DC converters.
Though not explicitly qualified for automotive applications, it is engineered for use in wider industrial, communications, and domestic equipment markets. This MOSFET features a maximum continuous drain current of 61 A and a drain-source voltage rating of 60 V.
It comes in a compact 4-pin LFPAK surface mount package with dimensions 3.4 mm length, 2.7 mm width, and 900 μm height. The device operates at temperatures ranging from -55°C to 175°C, ensuring reliability under industrial conditions.
Low maximum drain-source resistance of 24.4 mΩ delivers efficient conduction and minimal power loss. It has an enhancement channel mode and a maximum gate-source voltage of 20 V for robust switching. Maximum power dissipation capability is 91 W, enabling high power handling.
Typical gate charge is 23 nC at 20 V, suitable for standard level gate drive sources. Not qualified for automotive standards but optimized for industrial and communication equipment. Surface mount technology type ensures compatibility with automated assembly processes.
Low switching and conduction losses enable high efficiency in AC-to-DC and DC-DC converter applications. Explore more industrial semiconductor components from Nexperia to enhance your electronic designs at EnvMart.
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