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Nexperia N-Channel MOSFET, 61 A, 60 V Enhancement, 4-Pin LFPAK Surface Mount PSMN011-60MSX

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 900μm
Length 3.4mm
Model PSMN011-60MSX
Width 2.7mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type LFPAK
Minimum Operating Temperature -55°C
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 61A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 24.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 91W
Typical Gate Charge Qg @ Vgs 23nC
Maximum Gate Source Voltage Vgs 20V

Key Features

  • This MOSFET features a maximum continuous drain current of 61 A and a drain-source voltage rating of 60 V.
  • It comes in a compact 4-pin LFPAK surface mount package with dimensions 3.4 mm length, 2.7 mm width, and 900 μm height.
  • The device operates at temperatures ranging from -55°C to 175°C, ensuring reliability under industrial conditions.
  • Low maximum drain-source resistance of 24.4 mΩ delivers efficient conduction and minimal power loss.
  • It has an enhancement channel mode and a maximum gate-source voltage of 20 V for robust switching.
  • Maximum power dissipation capability is 91 W, enabling high power handling.
  • Typical gate charge is 23 nC at 20 V, suitable for standard level gate drive sources.
  • Not qualified for automotive standards but optimized for industrial and communication equipment.

Product Description

Nexperia PSMN011-60MSX is an N-Channel enhancement mode MOSFET designed for robust and efficient switching in industrial, communication, and domestic electronic equipment. With a maximum continuous drain current of 61 A and a maximum drain-source voltage of 60 V, this device is optimized for handling power in compact surface mount packages.

The 4-pin LFPAK package, measuring 3.4 mm in length, 2.7 mm in width, and 900 μm in height, provides a footprint compatible with other 3.3 mm types, enabling easy integration into high-density PCB designs.

Operating temperature range from -55°C to 175°C assures performance stability under demanding conditions. The device features a low maximum drain-source resistance of 24.4 mΩ which reduces conduction losses and improves system efficiency.

Its maximum gate-source voltage is 20 V, suitable for standard gate drive levels, with a typical gate charge of 23 nC facilitating fast switching performance.

This MOSFET has a maximum power dissipation rating of 91 W, making it well-suited for power-critical applications such as AC-to-DC converters, synchronous rectification, and DC-DC converters.

Though not explicitly qualified for automotive applications, it is engineered for use in wider industrial, communications, and domestic equipment markets. This MOSFET features a maximum continuous drain current of 61 A and a drain-source voltage rating of 60 V.

It comes in a compact 4-pin LFPAK surface mount package with dimensions 3.4 mm length, 2.7 mm width, and 900 μm height. The device operates at temperatures ranging from -55°C to 175°C, ensuring reliability under industrial conditions.

Low maximum drain-source resistance of 24.4 mΩ delivers efficient conduction and minimal power loss. It has an enhancement channel mode and a maximum gate-source voltage of 20 V for robust switching. Maximum power dissipation capability is 91 W, enabling high power handling.

Typical gate charge is 23 nC at 20 V, suitable for standard level gate drive sources. Not qualified for automotive standards but optimized for industrial and communication equipment. Surface mount technology type ensures compatibility with automated assembly processes.

Low switching and conduction losses enable high efficiency in AC-to-DC and DC-DC converter applications. Explore more industrial semiconductor components from Nexperia to enhance your electronic designs at EnvMart.

Nexperia N-Channel MOSFET, 61 A, 60 V Enhancement, 4-Pin LFPAK Surface Mount PSMN011-60MSX
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Frequently Asked Questions

The maximum continuous drain current of this model is 61 A.

This MOSFET has a maximum drain-source voltage rating of 60 V.

The LFPAK package measures 3.4 mm in length, 2.7 mm in width, and 900 μm in height.

It operates within a temperature range of -55°C to 175°C.

The maximum power dissipation capability of this MOSFET is 91 W.

The typical gate charge at 20 V is 23 nC.

The maximum gate-source voltage for this model is 20 V.

It features a low maximum drain-source resistance of 24.4 mΩ.

This device uses an enhancement channel mode.

This model is not qualified for automotive standards but is optimized for industrial and communication equipment.

The MOSFET has a pin count of 4.

The country of origin for this MOSFET is India.

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