Infineon ISP Type P-Channel MOSFET, 1.29 A, 150 V Enhancement, 3-Pin SOT-223 ISP14EP15LMXTSA1

Infineon ISP14EP15LMXTSA1 P-Channel MOSFET is a high-quality electronic component engineered for battery management, load switching, and reverse polarity protection in industrial automation and general electronics applications. It offers a maximum continuous drain current of 1.29 A and supports a maximum drain-source voltage of 150 V, making it suitable for medium and low power applications.

Housed in a compact SOT-223 3-pin surface mount package, this enhancement mode MOSFET ensures ease of integration on printed circuit boards with a footprint compatible with industry standards. Its low drain-source resistance (1.38 Ω) contributes to higher efficiency and reduced power loss during operation.

The device features a typical gate charge of 11.6 nC at Vgs, enabling fast switching speeds crucial for responsive electronic designs. It withstands a maximum gate-source voltage of 20 V and supports power dissipation up to 5 watts. Its robust operation across a wide temperature range from -55°C to 175°C adds to its reliability in demanding industrial environments.

Key design advantages include avalanche ruggedness, making the MOSFET resilient to voltage spikes, and logic level compatibility facilitating easy interfacing with microcontrollers. The standard SOT-223 package dimensions (6.1 mm length, 1.2 mm width, 5.35 mm height) ensure compatibility with compact designs.

Operates with a maximum continuous drain current of 1.29 amperes. Supports a maximum drain-source voltage rating of 150 volts. Features a surface mount SOT-223 package with 3 pins for easy PCB integration. Enhancement mode channel ensures efficient switching performance.

Maximum power dissipation of 5 watts for robust operation. Typical gate charge of 11.6 nC at Vgs, allowing fast switching. Wide operating temperature range from -55°C up to 175°C. Low drain-source resistance of 1.38 ohms to improve efficiency.

Maximum gate-source voltage of 20 volts to protect against damage. Compact dimensions: Length 6.1 mm, Width 1.2 mm, Height 5.35 mm.

This MOSFET is ideal for applications requiring efficient load switching, battery management, and reverse polarity protection in industrial, commercial, and electronic devices. It offers reliable performance and a durable package suitable for high-quality demanding environments.

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