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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3mm |
| Model | DMP2045U-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.2W |
| Typical Gate Charge Qg @ Vgs | 6.8nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | -1.2V |
DiodesZetex DMP2045U-7 is a P-Channel MOSFET designed for high-efficiency power management applications. It supports a maximum continuous drain current of 4.3 A and maximum drain-source voltage of 20 V. The device comes in a compact 3-pin SOT-23 surface mount package which allows easy integration into space-constrained electronic circuits.
Operating in enhancement mode, this MOSFET exhibits low on-resistance (RDS(ON)), around 90 mΩ, minimizing conduction losses while maintaining fast switching speeds. The typical gate charge (Qg) of 6.8 nC enables efficient switching performance, reducing gate drive power requirements.
With a maximum power dissipation of 1.2 W and an operating temperature range of -55°C to 150°C, this component suits a wide range of industrial, consumer, and automotive electronic environments. It adheres to AEC-Q101 automotive standard, ensuring reliability in automotive applications.
The device's gate is protected against electrostatic discharge (ESD), enhancing durability and safety. Additionally, it is a lead-free, halogen, and antimony free “Green” device compliant with modern environmental standards.
Typical application areas include DC-DC converters and various power management functions where high efficiency and robustness are critical. This MOSFET features low on-resistance for efficient power management. It operates at an enhancement channel mode with fast switching speed.
Designed with a maximum power dissipation of 1.2 W for reliability. It supports a wide operating temperature range from -55°C to 150°C. You get a low typical gate charge of 6.8 nC for efficient gate drive. Protected gate against electrostatic discharge enhances durability.
It is a lead-free, halogen and antimony free “Green” device. Ideal for DC-DC converters and various power management functions. Explore a broad selection of MOSFETs and discrete semiconductors on EnvMart to meet your electronic component needs.
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