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Nexperia N-Channel MOSFET, 200 mA, 60 V Enhancement Mode, 3-Pin SOT-23 Package BSS138AKAR

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 3mm
Model BSS138AKAR
Width 1.4mm
Mount Type Surface
Series BSS138AKA
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 200mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 4.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.06W
Typical Gate Charge Qg @ Vgs 0.39nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • This N-Channel enhancement mode MOSFET operates at a maximum drain current of 200 mA.
  • Maximum drain-source voltage rating is 60 V, ensuring robust switching capabilities.
  • Compact 3-pin SOT-23 package suitable for surface mounting.
  • Low typical gate charge of 0.39 nC, optimizing switching efficiency.
  • Maximum power dissipation is 1.06 W for reliable thermal performance.
  • Operates within a temperature range of -55°C to 150°C for diverse industrial applications.
  • Features a maximum drain-source resistance of 4.5 ohms.
  • Conforms to automotive standard AEC-Q101, suitable for automotive electronics.

Product Description

Nexperia BSS138AKAR is a high-quality N-channel MOSFET designed for discrete semiconductor applications. It supports a continuous drain current of 200 mA and a maximum drain-source voltage of 60 V, packed in a compact 3-pin SOT-23 surface-mount package ideal for space-constrained circuit designs.

This device operates with an enhancement mode channel, providing efficient switching characteristics with a low gate charge of 0.39 nC at Vgs. It dissipates power up to 1.06 W and can function reliably across a broad temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and consumer electronics.

The MOSFET offers a maximum drain-source resistance (Rds) of 4.5 ohms, minimizing conduction losses. Its gate-source voltage rating ranges from -20 to +20 V, allowing flexible drive conditions. The forward voltage is typically 1.2 V.

Compliant with AEC-Q101 automotive standards, the BSS138AKAR is validated for use in automotive electrical systems, ensuring durability and safety under harsh operating environments.

This N-channel MOSFET delivers 200 mA continuous current for low power applications. The device's compact SOT-23 package offers surface mount convenience and minimal PCB footprint. Rated for operating temperatures between -55°C and 150°C for enhanced reliability.

Small gate charge ensures efficient switching with reduced power losses. Suitable for automotive, industrial, and general electronics uses thanks to AEC-Q101 compliance. Low Rds(on) reduces conduction losses during operation.

Voltage ratings ensure robust device operation in power management circuits.

This product is ideal for engineers and designers requiring a reliable discrete MOSFET transistor for switching and amplification tasks in electronics manufacturing, automotive applications, and power management solutions. Discover more products by browsing the MOSFET category on EnvMart.

Nexperia N-Channel MOSFET, 200 mA, 60 V Enhancement Mode, 3-Pin SOT-23 Package BSS138AKAR
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Frequently Asked Questions

The maximum continuous drain current for this model is 200 mA.

It has a maximum drain-source voltage rating of 60 V.

The typical gate charge at Vgs is 0.39 nC, which helps optimize switching efficiency.

This model comes in a compact SOT-23 package with dimensions of 3 mm in length, 1.4 mm in width, and 1 mm in height.

The maximum power dissipation for this device is 1.06 W.

It operates within a temperature range of -55°C to 150°C.

The maximum drain-source resistance is 4.5 ohms.

It conforms to the AEC-Q101 automotive standard, making it suitable for automotive electronics.

The gate-source voltage rating ranges from -20 V to +20 V.

This MOSFET features a 3-pin configuration.

It operates in enhancement mode, which is typical for N-channel MOSFETs.

This model is suitable for automotive, industrial, and general electronics applications due to its specifications and AEC-Q101 compliance.

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