Vishay N-Channel Power MOSFET, TO-262 Package, 4.1 A Continuous Drain Current, 800 V Drain Source Voltage, 3-Pin IRFBE30LPBF

Vishay IRFBE30LPBF is a high-voltage N-Channel Power MOSFET designed for demanding industrial electronics that require robust power switching and conversion capabilities. This device is housed in a TO-262 package with three pins, facilitating efficient thermal management and straightforward PCB integration.

Featuring a maximum continuous drain current of 4.1 A and a maximum drain-source voltage of 800 V, this MOSFET is suitable for applications including industrial high-voltage power supplies, motor drive circuits, switch-mode power conversion stages, and overload protection systems. The device supports a power dissipation of up to 125 W allowing it to handle sustained thermal loads.

The IRFBE30LPBF provides a typical gate charge of 78 nC, enabling precise control during switching transitions while maintaining gate safety with a maximum gate-source voltage rating of 20 V. It operates reliably over a wide temperature range from -55°C to 150°C, ideal for environments with significant temperature fluctuations.

This MOSFET contains a single active element on the chip, offering straightforward transistor configuration. It delivers a maximum drain-source resistance of 3 Ω providing predictable conduction characteristics. The forward voltage is typically 1.8 V, enhancing efficiency in power conversion applications.

Supports 4.1 A continuous drain current for moderate load applications. Rated at 800 V drain-source voltage for high-voltage switching. Robust TO-262 package with 3 pins for effective heat dissipation. Handles 125 W maximum power dissipation to support sustained operations.

Typical gate charge of 78 nC allows controlled switching. Max gate-source voltage limited to 20 V to ensure gate protection. Wide operating temperature range from -55°C to 150°C for harsh conditions. Single transistor chip simplifies circuit topology.

Maximum Rds(on) of 3 Ω for reliable conduction performance. Typical forward voltage at 1.8 V enhances efficiency.

This power MOSFET suits industrial, manufacturing, and power management electronics requiring dependable high-voltage transistor performance. It is applicable in HVAC systems, motor drives, switch-mode supplies, and protective circuitry.

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