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Vishay N-Channel Power MOSFET, 50 A Drain Current, 60 V Drain-Source Voltage, TO-220AB Package IRFZ44RPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | IRFZ44RPBF |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS 2002/95/EC |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.028Ω |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Single |
Key Features
- Operates with low drain-source resistance of 0.028 ohms at 10 V gate-source voltage.
- Maximum gate-source voltage rating of 20 V ensuring reliable switching.
- Typical gate charge of 67 nC suitable for fast switching applications.
- Handles up to 150 W maximum power dissipation for high-performance circuits.
- Wide operating temperature range from -55°C up to 175°C.
- Single transistor configuration optimized for efficiency and life span.
- RoHS compliant and lead-free component following 2002/95/EC standards.
- Advanced process technology for low switching and conduction losses.
Product Description
Vishay IRFZ44RPBF is a high-performance N-Channel Power MOSFET packaged in TO-220AB, designed for demanding electronic applications requiring a maximum continuous drain current of 50 A and a voltage rating of 60 V.
This MOSFET offers a low drain-source resistance of 0.028 ohms at a gate-source voltage of 10 V, which enhances efficiency by minimizing conduction losses during switching cycles. It is designed to handle a maximum gate-source voltage of 20 V and supports fast switching, making it ideal for power management circuits.
The device has a maximum power dissipation capacity of 150 W and an operational temperature range from -55°C to 175°C, suitable for industrial, automotive, laboratory, and commercial electronics uses. Its single transistor configuration provides stability and reliable performance over long periods.
Manufactured under strict RoHS compliance (2002/95/EC), the IRFZ44RPBF is a lead-free component optimized for reduced environmental impact. It is also fully avalanche rated, ensuring robust performance under transient conditions.
Key applications include battery chargers, inverters, power supplies, and switching mode power supplies (SMPS), where efficiency and reliability are critical. The MOSFET’s advanced process technology and dynamic dV/dt rating ensure durability and performance consistency.
Low on-resistance for reduced power loss. Fully avalanche rated for transient tolerance. Lead (Pb) free and RoHS compliant. Wide temperature operating range from -55°C to 175°C. Suitable for industrial and automotive electronics.
Explore more Vishay semiconductor solutions and power management components at EnvMart for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
It has a maximum drain-source voltage rating of 60 V.
The IRFZ44RPBF is packaged in a TO-220AB type.
The typical gate charge is 67 nC at a gate-source voltage of 10 V.
This MOSFET can handle a maximum power dissipation of 150 W.
It operates within a temperature range from -55°C to 175°C.
The maximum gate-source voltage rating is 20 V.
It utilizes a single transistor configuration.
Yes, it is RoHS compliant according to the 2002/95/EC standards.
The drain-source resistance is 0.028 ohms at a gate-source voltage of 10 V.
It is suitable for applications such as battery chargers, inverters, and power supplies.
The country of origin for this model is China.
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