Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

DiodesZetex N-Channel MOSFET 130A 60V Enhancement Mode 3-Pin TO-220 DMNH6008SCT

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DMNH6008SCT
Width 2.5mm
Mount Type Through Hole
Series DMN
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 130A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 6mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.13W
Typical Gate Charge Qg @ Vgs 40nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf 700mV

Key Features

  • Supports high continuous drain current of 130 amperes.
  • Operates at a maximum drain-source voltage of 60 volts.
  • Features low drain-source resistance of 6 milliohms.
  • Designed with enhancement mode channel.
  • Maximum power dissipation of 1.13 watts ensures efficient thermal performance.
  • Operates reliably between -55°C to 175°C temperature range.
  • Typical gate charge of 40 nanocoulombs at 12V gate-source voltage.
  • Complies with automotive standard AEC-Q101.

Product Description

DiodesZetex DMNH6008SCT is a high-performance N-Channel MOSFET designed for efficient switching and amplification applications in electronics. Featuring a continuous drain current rating of 130 amperes and a drain-source voltage rating of 60 volts, this device is suitable for demanding power management tasks in automotive, industrial, and consumer electronics.

Encased in a standard 3-Pin TO-220 package, it supports through-hole mounting, offering ease of installation and heat dissipation. The low maximum drain-source resistance of 6 milliohms improves efficiency by minimizing conduction losses.

This MOSFET operates in enhancement mode and possesses a maximum power dissipation of 1.13 watts, ensuring stable operation over a broad temperature range from -55°C to 175°C. It also meets the rigorous automotive AEC-Q101 standard, confirming its robustness for automotive electronic systems.

The gate charge of 40 nC at a 12V gate-source voltage enables fast switching with reduced gate drive power. The compact device dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height facilitate integration into dense circuit boards. A low forward voltage drop of 700 mV ensures minimal power loss during conduction.

Supports high continuous drain current of 130 amperes. Operates at a maximum drain-source voltage of 60 volts. Features low drain-source resistance of 6 milliohms. Designed with enhancement mode channel. Maximum power dissipation of 1.13 watts ensures efficient thermal performance.

Operates reliably between -55°C to 175°C temperature range. Typical gate charge of 40 nanocoulombs at 12V gate-source voltage. Complies with automotive standard AEC-Q101. Compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height.

Forward voltage drop is 700 millivolts.

This MOSFET is ideal for industrial power conversion, automotive electronics, power supplies, and general switching applications. Its robust specifications make it suitable for use in laboratories, manufacturing equipment, and advanced electronic systems that require reliable and efficient power control devices.

Explore the extensive range of discrete semiconductors and MOSFETs on EnvMart, offering trusted solutions for your electronic design and production needs.

DiodesZetex N-Channel MOSFET 130A 60V Enhancement Mode 3-Pin TO-220 DMNH6008SCT
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 130 amperes.

This MOSFET operates at a maximum drain-source voltage of 60 volts.

It features a low maximum drain-source resistance of 6 milliohms.

The typical gate charge is 40 nanocoulombs at a 12V gate-source voltage.

It operates reliably between -55°C to 175°C.

The maximum power dissipation is 1.13 watts, ensuring efficient thermal performance.

This model has dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height.

It supports through-hole mounting, which facilitates installation and heat dissipation.

It complies with the automotive standard AEC-Q101, confirming its suitability for automotive applications.

The forward voltage drop is 700 millivolts, which helps minimize power loss during conduction.

This model has a pin count of 3.

It is designed with an N-channel, which is suitable for enhancement mode applications.

Related Products

Other Products from this brand

$2.28
$2.22 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$2.28
$2.22
Tax included