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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3mm |
| Model | DMNH6008SCT |
| Width | 2.5mm |
| Mount Type | Through Hole |
| Series | DMN |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 130A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.13W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | 700mV |
DiodesZetex DMNH6008SCT is a high-performance N-Channel MOSFET designed for efficient switching and amplification applications in electronics. Featuring a continuous drain current rating of 130 amperes and a drain-source voltage rating of 60 volts, this device is suitable for demanding power management tasks in automotive, industrial, and consumer electronics.
Encased in a standard 3-Pin TO-220 package, it supports through-hole mounting, offering ease of installation and heat dissipation. The low maximum drain-source resistance of 6 milliohms improves efficiency by minimizing conduction losses.
This MOSFET operates in enhancement mode and possesses a maximum power dissipation of 1.13 watts, ensuring stable operation over a broad temperature range from -55°C to 175°C. It also meets the rigorous automotive AEC-Q101 standard, confirming its robustness for automotive electronic systems.
The gate charge of 40 nC at a 12V gate-source voltage enables fast switching with reduced gate drive power. The compact device dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height facilitate integration into dense circuit boards. A low forward voltage drop of 700 mV ensures minimal power loss during conduction.
Supports high continuous drain current of 130 amperes. Operates at a maximum drain-source voltage of 60 volts. Features low drain-source resistance of 6 milliohms. Designed with enhancement mode channel. Maximum power dissipation of 1.13 watts ensures efficient thermal performance.
Operates reliably between -55°C to 175°C temperature range. Typical gate charge of 40 nanocoulombs at 12V gate-source voltage. Complies with automotive standard AEC-Q101. Compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height.
Forward voltage drop is 700 millivolts.
This MOSFET is ideal for industrial power conversion, automotive electronics, power supplies, and general switching applications. Its robust specifications make it suitable for use in laboratories, manufacturing equipment, and advanced electronic systems that require reliable and efficient power control devices.
Explore the extensive range of discrete semiconductors and MOSFETs on EnvMart, offering trusted solutions for your electronic design and production needs.
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