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Infineon N-Channel MOSFET 400 A 800 V Surface Mount TO-263 8-Pin IPT026N10N5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPT026N10N5ATMA1 |
| Mount Type | Surface |
| Series | IPT |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 400A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Utilizes TO-263 surface mount 8-pin package for efficient PCB integration.
- Maximum continuous drain current of 400 A supports high load applications.
- Low on-resistance of 1.2 milliohms reduces conduction losses significantly.
- Maximum power dissipation rated at 81 W ensures robust thermal handling.
- Operates reliably from -55°C up to 175°C for demanding environments.
- Gate source voltage maximum of 20 V supports reliable switching control.
- Typical gate charge of 80 nC supports high switching frequencies.
- Forward voltage drop is 1 V minimizing power loss in conduction.
Product Description
Infineon IPT026N10N5ATMA1 is an advanced N-Channel MOSFET optimized for high efficiency and thermal performance in power switching applications. This device is housed in a TO-263 surface mount 8-pin package, providing a compact footprint and excellent heat dissipation, making it suitable for automotive and industrial use.
It features a maximum continuous drain current of 400 A and a maximum drain-source voltage of 800 V, enabling operation in high-power environments such as power converters, motor drives, and switched-mode power supplies.
The MOSFET achieves very low on-resistance of 1.2 milliohms, minimizing conduction losses and improving overall efficiency. With a maximum power dissipation capacity of 81 W and an operating temperature range from -55°C to 175°C, this device meets demanding industrial thermal requirements.
The typical gate charge of 80 nanocoulombs and forward voltage of 1 V allow for rapid switching and reduced switching losses, making it ideal for high-frequency power management. This component is fully RoHS-compliant and meets the stringent automotive AEC-Q101 standard, confirming suitability for safety-critical applications.
TO-263 surface mount 8-pin package provides space-saving design and improved thermal management. Supports high currents up to 400 A for demanding power loads. Low drain-source resistance reduces conduction losses for efficient operation.
Wide operating temperature range supports diverse industrial environments. Complies with environmental and automotive standards for reliable use.
Commonly used in industrial electronics, automotive power modules, embedded systems, and power supply design, this MOSFET provides a reliable solution for efficient energy conversion and load management.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPT026N10N5ATMA1 is 400 A, making it suitable for high load applications.
This MOSFET has a maximum drain-source voltage of 800 V, enabling operation in high-power environments.
The on-resistance of this model is 1.2 milliohms, which helps to minimize conduction losses.
The maximum power dissipation for this MOSFET is rated at 81 W, ensuring robust thermal handling.
It operates reliably within a temperature range of -55°C to 175°C, suitable for demanding environments.
The typical gate charge for the Infineon IPT026N10N5ATMA1 is 80 nC, which supports high switching frequencies.
This model is housed in a TO-263 surface mount 8-pin package, providing efficient PCB integration.
The maximum gate-source voltage for this device is 20 V, which supports reliable switching control.
It complies with the AEC-Q101 automotive standard, confirming its suitability for safety-critical applications.
The forward voltage drop is 1 V, which minimizes power loss during conduction.
Yes, the Infineon IPT026N10N5ATMA1 is fully RoHS-compliant, meeting environmental standards.
This MOSFET features an 8-pin configuration, suitable for surface mount applications.
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