World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

Toshiba U-MOSVIII-H N-Channel Enhancement Mode MOSFET, 38 A, 30 V, 24 W, 8-Pin SOP TPH8R903NL,LQ(S)

Free Delivery in India | Lowest Global Shipping Charges

Toshiba U-MOSVIII-H N-Channel Enhancement Mode MOSFET, 38 A, 30 V, 24 W, 8-Pin SOP TPH8R903NL,LQ(S)

Name: Toshiba U-MOSVIII-H N-Channel Enhancement Mode MOSFET, 38 A, 30 V, 24 W, 8-Pin SOP TPH8R903NL,LQ(S)
Brand: Toshiba
SKU: 301396
Price: 0.49 USD
Availability: InStock



Category MOSFETs Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	950μm
Length	5mm
Model	TPH8R903NL,LQ(S
Width	5mm
Mount Type	Surface
Series	U-MOSVIII-H
Maximum Operating Temperature	150°C
Package Type	SOP
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	38A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	12.7mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	24W
Typical Gate Charge Qg @ Vgs	9.8nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

High maximum continuous drain current of 38 A ensures robust performance.
Maximum drain-source voltage of 30 V for reliable operation.
Enhancement mode channel for controlled switching.
Low on-resistance of 12.7 milliohms minimizes power loss.
Surface mount 8-pin SOP package supports compact PCB design.
Maximum power dissipation rated at 24 W for efficient thermal handling.
Wide operating temperature up to 150°C enables use in demanding environments.
Gate voltage range of -20 V to +20 V for flexible control.

Product Description

The Toshiba TPH8R903NL,LQ(S is an advanced U-MOSVIII-H series N-Channel Enhancement Mode MOSFET designed for power management in electronic circuits. Rated for a maximum continuous drain current of 38 A and a maximum drain-source voltage of 30 V, this device offers efficient switching with a low on-resistance of 12.7 milliohms. The surface mount 8-pin SOP package facilitates compact and flexible PCB layout, suitable for high-density electronics manufacturing.

This MOSFET is capable of dissipating up to 24 W of power and operates reliably up to 150°C, making it ideal for industrial, power supply, and consumer electronic applications demanding high current capability and thermal stability.

The device supports a maximum gate-source voltage ranging from -20 to +20 V, allowing versatile gate drive options for improved circuit design flexibility. Its dimensions of 5 mm by 5 mm with a height of 950 micrometers contribute to space-saving designs without compromising performance.

Manufactured in Japan, Toshiba ensures stringent quality standards and advanced semiconductor technology integrating the U-MOSVIII-H series design for enhanced efficiency and reliability.

High maximum continuous drain current ensures robust conduction capacity. Low on-resistance reduces conduction losses and improves efficiency. Compact 8-pin SOP surface mount package enables high-density PCB designs. Thermally stable operation up to 150°C suitable for harsh environments.

Wide gate voltage range supports flexible driving and switching control. Reliable Japanese manufacturing assures quality and performance consistency.

This MOSFET is widely applicable across industrial electronics, power management modules, switching regulators, and automotive circuits requiring high current switching devices. Browse more semiconductors and MOSFET products on EnvMart for comprehensive power management solutions.

Explore more products in our MOSFETs category.