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DiodesZetex Isolated 2 N-Channel Small Signal MOSFET 1.33 A, 20 V Enhancement, 6-Pin SOT-563 DMN2400UV-7

Category MOSFETs Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 0.6mm
Length 1.7mm
Model DMN2400UV-7
Width 1.25mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SOT-563
Minimum Operating Temperature -55°C
Standards/Approvals RoHS, AEC-Q101, UL 94V-0, J-STD-020, MIL-STD-202
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 1.33A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 1.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 530mW
Typical Gate Charge Qg @ Vgs 0.5nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 0.7V
Transistor Configuration Isolated

Key Features

  • Offers isolated dual N-Channel MOSFET configuration for enhanced performance.
  • Encapsulated in a compact 6-pin SOT-563 package designed for surface mounting.
  • Features a maximum continuous drain current of 1.33 amperes for efficient switching.
  • Maximum drain-source voltage rated at 20 volts, suitable for small signal switching.
  • Maximum drain-source resistance of 1.5 ohms supporting low conduction losses.
  • Operates in enhancement-mode channel type ensuring low leakage current.
  • Includes a forward voltage of 0.7 volts for predictable switching characteristics.
  • Rated for power dissipation up to 530 milliwatts under normal operating conditions.

Product Description

DiodesZetex DMN2400UV-7 is an isolated dual N-Channel MOSFET designed primarily for small signal switching applications. Packaged in a space-saving 6-pin SOT-563 surface mount package, this device supports a maximum continuous drain current of 1.33 A and a maximum drain-source voltage of 20 V, making it ideal for precision, low voltage circuits.

This dual MOSFET features a low maximum drain-source resistance of 1.5 ohms and a forward voltage of 0.7 V, providing efficient conduction and switching performance. It operates in enhancement mode and offers stable operation within a broad ambient temperature from -55°C up to +150°C, ensuring reliability in harsh automotive and industrial conditions.

The DMN2400UV-7 complies with demanding standards such as RoHS for environmental safety, AEC-Q101 automotive qualification, UL 94V-0 flame retardant rating, J-STD-020, and MIL-STD-202 standards for quality and durability. Its isolated transistor configuration and compact dimensions (length of 1.7 mm, width of 1.25 mm, and height of 0.6 mm) make it suitable for high-density PCB layouts.

This MOSFET is particularly suited for industrial and automotive electronics, power management circuits, signal amplification, and switching applications where space, power efficiency, and reliability are critical. Its typical gate charge of 0.5 nC at Vgs provides quick switching capabilities, enhancing overall system performance.

Offers isolated dual N-Channel MOSFET configuration for enhanced performance. Encapsulated in a compact 6-pin SOT-563 package designed for surface mounting. Features a maximum continuous drain current of 1.33 amperes for efficient switching.

Maximum drain-source voltage rated at 20 volts, suitable for small signal switching. Maximum drain-source resistance of 1.5 ohms supporting low conduction losses. Operates in enhancement-mode channel type ensuring low leakage current.

Includes a forward voltage of 0.7 volts for predictable switching characteristics. Rated for power dissipation up to 530 milliwatts under normal operating conditions. Wide operating temperature range from -55°C to +150°C enabling use in automotive and industrial environments.

Complies with industry standards including RoHS, AEC-Q101, UL 94V-0 and MIL-STD-202 for reliability.

For engineering design, this component supports automated PCB assembly and is supplied on tape for efficient production line integration. The DMN2400UV-7 dual MOSFET is a reliable choice for precision electronics requiring compact size, high performance, and industry-standard compliance.

Explore our Electronics & Electricals category for a wide range of discrete semiconductors and MOSFET devices suitable for various industrial, automotive, and commercial electronics applications.

Explore more products in our MOSFETs category.

DiodesZetex Isolated 2 N-Channel Small Signal MOSFET 1.33 A, 20 V Enhancement, 6-Pin SOT-563 DMN2400UV-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.33 amperes.

It has a maximum drain-source voltage rating of 20 volts, suitable for small signal switching applications.

This MOSFET is encapsulated in a compact 6-pin SOT-563 package designed for surface mounting.

The maximum power dissipation is rated at 530 milliwatts under normal operating conditions.

The typical gate charge at Vgs is 0.5 nC, which provides quick switching capabilities.

The maximum drain-source resistance is 1.5 ohms, supporting low conduction losses.

It operates within a temperature range from -55°C to +150°C, making it suitable for harsh environments.

This model complies with RoHS, AEC-Q101, UL 94V-0, J-STD-020, and MIL-STD-202 standards.

The forward voltage is 0.7 volts, ensuring predictable switching characteristics.

This model features 2 elements per chip in its isolated dual N-Channel configuration.

It operates in enhancement mode as an N-channel MOSFET, ensuring low leakage current.

The dimensions are 0.6 mm in height, 1.7 mm in length, and 1.25 mm in width.

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