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Infineon 700V CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-220 IPAN70R360P7SXKSA1

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Infineon 700V CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-220 IPAN70R360P7SXKSA1

Name: Infineon 700V CoolMOS P7 N-Channel MOSFET, 12.5 A, 700 V Enhancement, 3-Pin TO-220 IPAN70R360P7SXKSA1
Brand: Infineon
SKU: 307382
Price: 20.22 USD
Availability: InStock

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Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IPAN70R360P7SXKSA1
Mount Type	Through Hole
Series	700V CoolMOS P7
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	12.5A
Maximum Drain Source Voltage Vds	700V
Maximum Drain Source Resistance Rds	360mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	26.5W
Typical Gate Charge Qg @ Vgs	16.4nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	900mV

Key Features

Features enhancement mode channel operation for high efficiency.
Maximum drain-source voltage of 700 volts.
Maximum continuous drain current of 12.5 amperes for reliable power handling.
Extremely low Rds(on) of 360 milliohms reducing conduction losses.
Typical gate charge of 16.4 nanoCoulombs for fast switching.
Maximum power dissipation of 26.5 watts supports robust applications.
Operates over a wide temperature range from -55°C to 150°C.
Through-hole mount type with standard TO-220 package eases integration.

Product Description

Infineon IPAN70R360P7SXKSA1 is a 700V CoolMOS P7 series N-Channel MOSFET designed for low power Switch Mode Power Supply (SMPS) applications including mobile phone chargers, notebook adapters, lighting, and TV power supplies. This 3-pin TO-220 package device features an enhanced channel mode ensuring high efficiency and low switching losses.

The device supports a maximum continuous drain current of 12.5A and a maximum drain-source voltage rating of 700V, making it suitable for demanding power management tasks. Its extremely low on-resistance (Rds(on)) of 360 milliohms and typical gate charge of 16.4nC allow for minimal conduction and switching losses, supporting high power density designs for very slim and compact electronic products.

This MOSFET offers reliable operation within a temperature range from -55°C to 150°C and features an integrated electrostatic discharge (ESD) protection diode for enhanced durability. The through-hole mounting and standard TO-220 package type facilitate easy PCB integration and mechanical stability.

Infineon's CoolMOS P7 technology targets cost-sensitive consumer applications by delivering excellent thermal behavior, low losses due to optimized figure of merit (FOM), and fast switching capabilities. These features make the IPAN70R360P7SXKSA1 an ideal choice for efficient power conversion in electronic devices.

Enhancement mode N-Channel MOSFET with 700V durability. Maximum continuous current of 12.5A suitable for power supplies. Low Rds(on) and gate charge contribute to low energy losses. Standard TO-220 package with through-hole mount.

Wide operating temperature range enhances reliability. Integrated ESD protection diode boosts device robustness. Optimized technology for consumer electronics and SMPS markets.

Widely used in industrial, commercial, and consumer electronics sectors, this MOSFET supports efficient power management in chargers, adapters, lighting systems, and televisions. Its features enable the development of compact and high-performance power solutions.

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