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Infineon IAUC N-Channel MOSFET 24 A 100 V Enhancement 8-Pin SuperSO8 5x6 IAUC24N10S5L300ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IAUC24N10S5L300ATMA1
Mount Type Surface
Series IAUC
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 24A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 1.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.1V

Key Features

  • This device operates in enhancement mode suited for high-voltage switching applications.
  • It features a low 1.4mΩ maximum drain-source resistance for efficient conduction.
  • Maximum power dissipation is rated at 81 W, enabling thermal reliability.
  • Typical gate charge of 80 nC enables controlled switching performance.
  • Robust 20 V maximum gate-source voltage supports strong gate drive margins.
  • Operates reliably over an extended temperature range from -55°C to 175°C.
  • Complies with RoHS and automotive AEC-Q101 standards for quality assurance.
  • Package type is surface-mount SuperSO8 5x6 facilitating compact PCB layouts.

Product Description

Infineon IAUC24N10S5L300ATMA1 is a high-voltage N-channel MOSFET designed for power management in compact surface-mount assemblies. It supports a maximum continuous drain current of 24 A and a drain-source voltage rating of 100 V, making it suitable for robust power-switching applications requiring low on-resistance and high current capacity.

The device operates in enhancement mode, featuring a maximum drain-source resistance of 1.4mΩ which reduces conduction losses under load. Its power dissipation capability of 81 W allows handling of thermal loads in tight layouts. A typical gate charge of 80 nC facilitates efficient switching suitable for DC-DC converters and automotive power control modules.

Designed for demanding environments, the MOSFET can operate from a minimum temperature of -55°C up to a maximum of 175°C. The package is a surface-mount 8-pin SuperSO8 measuring 5x6 mm, optimized for compact power supply designs and high-current load switching in embedded systems. The device complies with the RoHS directive and meets the automotive AEC-Q101 standard ensuring reliability in automotive applications.

Its robust 20 V maximum gate-source voltage rating allows for solid gate drive margins. The typical forward voltage drop is 1.1 V, important for conduction-drop calculations in low voltage designs.

This MOSFET is ideal for DC-DC converter switching stages, automotive power control modules, motor drivers, and boost circuits. The compact SuperSO8 package allows for efficient PCB space utilization in commercial and industrial equipment.

Meets stringent quality and environmental standards suitable for industrial, automotive, and power management applications. Explore more products like this in the MOSFET category for advanced power management solutions at EnvMart.

Infineon IAUC N-Channel MOSFET 24 A 100 V Enhancement 8-Pin SuperSO8 5x6 IAUC24N10S5L300ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 24 A.

This MOSFET has a maximum drain-source voltage rating of 100 V.

It comes in a surface-mount SuperSO8 package measuring 5 x 6 mm.

The maximum power dissipation for this device is rated at 81 W.

The typical gate charge is 80 nC, which facilitates efficient switching.

The maximum gate-source voltage for this model is 20 V.

It operates reliably over an extended temperature range from -55°C to 175°C.

The maximum drain-source resistance is 1.4 mΩ, which helps reduce conduction losses.

It complies with the AEC-Q101 automotive standard.

The typical forward voltage drop is 1.1 V, important for conduction-drop calculations.

It is suitable for applications such as DC-DC converters, automotive power control modules, and motor drivers.

This MOSFET complies with RoHS and meets automotive AEC-Q101 standards for quality assurance.

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