Infineon N-Channel MOSFET 24 A 100 V Enhancement Mode Surface Mount 8-Pin SuperSO8 5x6 IAUC24N10S5L300ATMA1

Infineon IAUC24N10S5L300ATMA1 is a high-voltage N-Channel Enhancement Mode MOSFET optimized for power management in compact surface-mount assemblies. It features a maximum continuous drain current of 24 A and a maximum drain-source voltage of 100 V, making it ideal for applications requiring efficient switching and power delivery.

This MOSFET is housed in a SuperSO8 5 x 6 mm surface-mount package with 8 pins, enabling easy integration in modern PCB designs. The device offers a low on-resistance of 1.4 mΩ which results in reduced conduction losses and improved efficiency under load conditions. With a power dissipation rating of 81 W, it can handle significant thermal loads encountered in confined layouts.

Typical gate charge of 80 nC allows precise control during switching cycles, which is critical for DC-DC converters and other power supply applications. The gate-source voltage maximum of 20 V ensures a robust gate drive margin for reliable operation. Operating temperatures range from −55°C up to 175°C, providing durability under harsh environmental conditions.

This MOSFET complies with RoHS environmental standards, and meets the automotive grade standard AEC-Q101, making it suitable for automotive power control modules and other demanding industrial use cases. The device's typical forward voltage is 1.1 V, an important factor for designing low-voltage power circuits.

Common application areas include DC-DC converter switching stages, automotive power control modules, high-voltage motor drivers, boost circuit designs, compact surface-mount power supplies, and high-current load switching in embedded systems.

Low on-resistance of 1.4mΩ reduces conduction losses under load. Continuous drain current up to 24 A supports sustained power delivery. 100 V maximum drain-source voltage enables high-voltage switching tasks. Power dissipation of 81 W manages thermal load in dense layouts.

Typical gate charge of 80 nC allows efficient switching control. Maximum gate-source voltage of 20 V offers robust drive capability. Wide operating temperature from −55°C to 175°C ensures reliability. Surface-mount SuperSO8 5 x 6 mm package with 8 pins for compact PCB design.

Meets RoHS and automotive AEC-Q101 standards for environmental and quality compliance. Forward voltage of 1.1 V for conduction-drop calculations in designs. Explore the power semiconductor category at EnvMart for similar Infineon MOSFETs and related components to optimize your power management solutions.