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Infineon N-Channel MOSFET, 120 A, 40 V, Enhancement Mode, 8-Pin SuperSO8 5x6 Package IAUZ20N08S5L300ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUZ20N08S5L300ATMA1 |
| Mount Type | Surface |
| Series | IAUZ |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- The MOSFET is designed with enhancement mode for reliable switching performance.
- Features a low maximum drain-source resistance of 1.4 milliohms for efficiency.
- Typical gate charge is 80 nanoCoulombs at Vgs, enabling fast switching.
- Power dissipation is rated at a maximum of 81 watts for high power applications.
- Operates within a temperature range from -55°C to 175°C ensuring durability.
- Maximum gate-source voltage is 20 volts, supporting standard gate drive voltages.
- Forward voltage drop is approximately 1.1 volts optimizing conduction losses.
- Complies with RoHS directives and meets automotive AEC-Q101 qualification for quality assurance.
Product Description
The Infineon IAUZ20N08S5L300ATMA1 is a high-performance N-Channel MOSFET designed for power and automotive applications requiring robust switching and conduction characteristics. Featuring a continuous drain current rating of 120 A and a maximum drain-source voltage of 40 V, this device is engineered to deliver efficient power handling in a compact 8-pin SuperSO8 (5 x 6 mm) surface-mount package.
Its enhancement mode operation and low drain-source resistance of 1.4 milliohms reduce conduction losses significantly, enhancing energy efficiency in demanding electrical circuits. The typical gate charge of 80 nC at Vgs ensures rapid switching capability, making it suitable for high-frequency power conversion and motor control applications.
The MOSFET supports a maximum power dissipation of 81 W and is rated for an operating temperature range from -55°C to 175°C, thereby ensuring reliable operation in harsh industrial and automotive environments. The maximum gate-source voltage of 20 V allows compatibility with standard gate drive circuits.
Additionally, the device features a forward voltage drop of 1.1 V that contributes to optimized switching performance and thermal management. It is RoHS compliant and qualified according to AEC-Q101 automotive standards, making it ideal for use in automotive powertrain, industrial motors, and other high-reliability applications.
The MOSFET is designed with enhancement mode for reliable switching performance. Features a low maximum drain-source resistance of 1.4 milliohms for efficiency. Typical gate charge is 80 nanoCoulombs at Vgs, enabling fast switching.
Power dissipation is rated at a maximum of 81 watts for high power applications. Operates within a temperature range from -55°C to 175°C ensuring durability. Maximum gate-source voltage is 20 volts, supporting standard gate drive voltages.
Forward voltage drop is approximately 1.1 volts optimizing conduction losses. Complies with RoHS directives and meets automotive AEC-Q101 qualification for quality assurance.
This MOSFET is suitable for integration in industrial power supplies, automotive electric control units, and various electronic equipment requiring efficient power management and long-term reliability. The surface-mount package facilitates automated PCB assembly and improved thermal performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
The typical gate charge at Vgs for this unit is 80 nanoCoulombs.
The maximum power dissipation rated for this MOSFET is 81 watts.
It operates within a temperature range from -55°C to 175°C.
The forward voltage drop of this MOSFET is approximately 1.1 volts.
The maximum gate-source voltage for this model is 20 volts.
This model uses an 8-pin SuperSO8 (5 x 6 mm) surface-mount package.
It complies with the AEC-Q101 automotive standard for quality assurance.
The maximum drain-source resistance is 1.4 milliohms.
Yes, this model complies with RoHS directives.
This device features an N-channel type.
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