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Infineon N-Channel Enhancement Mode MOSFET 100 A, 40 V, 8-Pin SuperSO8 5 x 6 IAUC100N04S6L025ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUC100N04S6L025ATMA1 |
| Mount Type | Surface |
| Series | IAUC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Maximum continuous drain current of 100 A ensures high current capability.
- Operates at a maximum drain-source voltage of 40 V for reliable switching.
- Utilizes a SuperSO8 5 x 6 package with 8 pins suitable for surface mounting.
- Enhancement mode channel provides efficient switching performance.
- Maximum power dissipation rated at 81 W supports high power applications.
- Typical gate charge of 80 nC allows fast switching speeds.
- Maximum drain-source resistance of 1.4 milliohms reduces conduction losses.
- Wide operating temperature range from -55°C to 175°C supports harsh environments.
Product Description
Infineon IAUC100N04S6L025ATMA1 is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding automotive and industrial power switching applications. It features a 100 A maximum continuous drain current and a 40 V maximum drain-source voltage in a compact SuperSO8 5 x 6 8-pin surface-mount package.
The device offers low on-resistance of 1.4 milliohms and fast switching capabilities supported by a typical gate charge of 80 nC at a gate-source voltage of 8 V. It supports a maximum power dissipation of 81 W, allowing it to handle significant power loads efficiently. The forward voltage drop is rated at just 1.1 V, contributing to improved circuit efficiency.
This MOSFET is qualified for automotive applications under the AEC-Q101 standard and can operate reliably in temperature ranges from -55°C up to 175°C. RoHS compliance ensures that it meets environmental and safety regulations.
Its surface-mount SuperSO8 package facilitates easy integration in modern PCB designs. The MOSFET is 100% avalanche tested, ensuring enhanced reliability and robustness in transient conditions. Ideal for use in automotive, industrial, and power management circuits requiring efficient high current switching.
Maximum continuous drain current of 100 A ensures high current capability. Operates at a maximum drain-source voltage of 40 V for reliable switching. Utilizes a SuperSO8 5 x 6 package with 8 pins suitable for surface mounting.
Enhancement mode channel provides efficient switching performance. Maximum power dissipation rated at 81 W supports high power applications. Typical gate charge of 80 nC allows fast switching speeds. Maximum drain-source resistance of 1.4 milliohms reduces conduction losses.
Wide operating temperature range from -55°C to 175°C supports harsh environments. Maximum gate-source voltage of 20 V supports robust gate drive requirements. Forward voltage drop of 1.1 V enhances efficiency. Compliant with RoHS and Automotive AEC-Q101 standards for quality and reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
It operates at a maximum drain-source voltage of 40 V.
This unit utilizes a SuperSO8 5 x 6 package with 8 pins suitable for surface mounting.
The maximum power dissipation rated for this MOSFET is 81 W.
The typical gate charge is 80 nC at a gate-source voltage of 8 V.
It has a maximum drain-source resistance of 1.4 milliohms.
It operates reliably in a temperature range from -55°C to 175°C.
This model is qualified for automotive applications under the AEC-Q101 standard.
Yes, it is compliant with RoHS standards, ensuring it meets environmental and safety regulations.
The forward voltage drop is rated at 1.1 V, which contributes to improved circuit efficiency.
It features an N-channel enhancement mode, providing efficient switching performance.
This MOSFET is designed for surface mounting, facilitating easy integration into modern PCB designs.
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