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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPZ40N04S5L7R4ATMA1 |
| Mount Type | Surface |
| Series | IPZ |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Infineon IPZ40N04S5L7R4ATMA1 is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding automotive and industrial applications. It features a SuperSO8 5 x 6 surface mount package with 8 pins for optimal space utilization on printed circuit boards.
With a maximum continuous drain current (Id) of 40 A and a maximum drain-source voltage (Vds) of 40 V, this MOSFET is capable of switching and control tasks requiring substantial power handling. Its low drain-source resistance (Rds(on)) of 1.4 mΩ reduces conduction losses, improving efficiency in power management circuits.
The device operates reliably within a wide temperature range from -55°C to 175°C and complies with the automotive industry AEC-Q101 standard, ensuring robustness in automotive electrics and other critical environments.
Additional features include 100% avalanche testing, RoHS compliance indicating eco-friendly manufacturing, and a maximum power dissipation of 81 W. The typical gate charge (Qg) of 80 nC at gate-source voltage allows fast and efficient switching transitions, suitable for high frequency and PWM control.
Surface mount SuperSO8 5 x 6 package with 8 pins. Maximum continuous drain current of 40 A for high power applications. Maximum drain-source voltage of 40 V and gate-source voltage of 20 V. Low drain-source resistance of 1.4 milliohms for efficient conduction.
Operating temperature range from -55°C to 175°C meeting automotive grade requirements. Certified compliant to automotive standard AEC-Q101. RoHS compliant ensuring environmental safety. Maximum power dissipation of 81 W for reliable thermal performance.
Typical gate charge of 80 nC for efficient switching.
This MOSFET is ideal for automotive power electronics, industrial motor drives, and electronic control units. Its compact form factor and high reliability make it suitable for advanced power management and switching applications.
Explore the range of Infineon semiconductors and power management components at EnvMart for enhanced design and manufacturing solutions.
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