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Infineon N-Channel Enhancement Mode MOSFET 100 A, 40 V, 81 W Power Dissipation, 8-Pin SuperSO8 5x6 IAUC100N04S6L014ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IAUC100N04S6L014ATMA1 |
| Mount Type | Surface |
| Series | IAUC |
| Maximum Operating Temperature | 175°C |
| Package Type | SuperSO8 5 x 6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Supports a maximum continuous drain current of 100 amperes for high current applications.
- Offers a maximum drain-source voltage rating of 40 volts suitable for automotive power circuits.
- Features a low on-resistance of 1.4 milliohms to minimize conduction losses.
- Equipped with an 8-pin compact surface mount SuperSO8 package measuring 5 by 6 millimeters.
- Capable of dissipating up to 81 watts of power to handle demanding loads efficiently.
- Operates reliably within a temperature range from -55°C to 175°C for harsh environments.
- Qualified to automotive AEC-Q101 standard ensuring high reliability and quality.
- Compliant with RoHS for environmentally friendly electronics manufacturing.
Product Description
Infineon IAUC100N04S6L014ATMA1 is a high-performance N-Channel Enhancement Mode MOSFET designed for automotive and industrial electronic applications requiring robust switching and power handling abilities. With a 40 V maximum drain-source voltage and a continuous drain current of 100 A, this device excels in efficient power delivery and energy management within demanding environments.
The MOSFET is housed in a compact 8-pin SuperSO8 package of dimensions 5 x 6 mm, allowing for space-saving PCB designs and surface mount technology assembly. Its low drain-source resistance of 1.4 mΩ ensures minimal conduction losses, contributing to improved inverter and converter efficiencies.
Engineered for automotive quality with AEC-Q101 qualification, this device supports operation across an extended temperature range from -55°C to 175°C, making it suitable for technology sectors such as automotive electronic control units, power management, and industrial motor drives. It features a typical gate charge of 80 nC, optimized for fast switching with low gate drive losses.
This Infineon OptiMOS™ 6 series MOSFET provides 81 W maximum power dissipation and withstands forward voltages of up to 1.1 V. The device is compliant with RoHS directives, supporting environmentally conscious manufacturing processes.
The robust surface mount design and strict quality measures make IAUC100N04S6L014ATMA1 an ideal component for applications demanding high reliability in harsh conditions such as automotive powertrain electronics, battery management systems, and industrial automation.
Maximum continuous drain current: 100 A. Maximum drain-source voltage: 40 V. Low on-resistance: 1.4 mΩ. Package type: 8-Pin SuperSO8 5x6 mm. Maximum power dissipation: 81 W. Operating temperature range: -55°C to 175°C. Automotive qualified to AEC-Q101 standard.
RoHS compliant for environmental safety. Typical gate charge: 80 nC. Enhancement mode N-Channel MOSFET. Explore more high-quality discrete semiconductors, MOSFETs, and power components at EnvMart for your industrial, automotive, and manufacturing electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 amperes, making it suitable for high current applications.
It has a maximum drain-source voltage rating of 40 volts, which is appropriate for automotive power circuits.
This unit features a low on-resistance of 1.4 milliohms, which helps minimize conduction losses.
It is capable of dissipating up to 81 watts of power, allowing it to handle demanding loads efficiently.
The operating temperature range is from -55°C to 175°C, making it suitable for harsh environments.
This model is housed in an 8-pin SuperSO8 package, measuring 5 by 6 millimeters.
Yes, it is qualified to the automotive AEC-Q101 standard, ensuring high reliability and quality for automotive applications.
The typical gate charge is 80 nanocoulombs, optimized for fast switching with low gate drive losses.
This model is RoHS compliant, supporting environmentally friendly electronics manufacturing.
The forward voltage rating for this MOSFET is 1.1 volts, which is relevant for its operation in circuits.
It is an N-channel Enhancement Mode MOSFET, which is suitable for various switching applications.
The dimensions of the SuperSO8 package are 5 mm by 6 mm, allowing for compact PCB designs.
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