Infineon BSC0 High Current N-Channel MOSFET 381 A, 40 V, 81W Power Dissipation, 8-Pin SuperSO8 Package BSC022N04LS6ATMA1

Infineon BSC022N04LS6ATMA1 is a high-current N-Channel MOSFET designed for power conversion and switching in demanding thermal environments. It comes in a compact 8-Pin SuperSO8 5 x 6 surface-mount package optimized for automated PCB assembly.

This device supports a maximum continuous drain current of 381 A and a maximum drain-source voltage of 40 V making it suitable for medium-voltage system designs and high current loads. It features an on-resistance as low as 0.7 mΩ which minimizes conduction losses, thereby enhancing overall system efficiency.

The MOSFET allows a maximum power dissipation of 81 W enabling substantial thermal loading capability. It can reliably operate over a wide temperature range from -55°C to 175°C, which makes it suitable for thermally stressed installations in industrial, power supply, and motor drive applications.

The typical gate charge of 80 nC at Vgs supports fast switching speeds necessary for efficient power management in synchronous rectification and DC-DC converter circuits. The maximum gate-source voltage of 20 V offers wide gate-drive headroom for flexible circuit designs. Additionally, a typical forward voltage of 1 V helps maintain low voltage drop when the device is conducting.

This MOSFET complies with RoHS regulations but is not certified for automotive standard requirements. It is ideal for high-current power supplies, motor control stages, server power rails, and other electronic applications requiring efficient low-loss switching under high thermal stress.

Maximum continuous drain current 381 A for high power switching. 40 V maximum drain-source voltage suited for medium-voltage circuits. Low 0.7 mΩ drain-source resistance reduces conduction loss. 81 W power dissipation capability for robust thermal management.

Wide temperature range from -55°C to 175°C supports extreme environments. Compact surface-mount 8-Pin SuperSO8 package for automated assembly. Typical gate charge 80 nC facilitates fast switching operation. Maximum gate-source voltage 20 V allows flexible gate drive design.

Typical forward voltage of 1 V minimizes conduction voltage drop. RoHS compliant but not automotive qualified. Explore more products in the MOSFET category for industrial and electronic applications on EnvMart.