Infineon IPL N-Channel MOSFET 4.5 A 800 V 5-Pin ThinPAK 5x6 IPLK80R1K2P7ATMA1

Infineon IPLK80R1K2P7ATMA1 is a high-performance N-Channel MOSFET designed for power electronic applications requiring efficient switching and compact design. Operating at a maximum drain source voltage of 800 V and continuous drain current of 4.5 A, this MOSFET is well-suited for applications such as flyback adapters, chargers, audio switch-mode power supplies, auxiliary power supplies, and industrial power circuits.

The device features a ThinPAK 5x6 surface-mount package with an ultra-small footprint measuring 5x6 mm² and a low profile height of 1 mm. This form factor enables designers to achieve higher power density and smaller overall PCB sizes. With reduced gate charge of 80 nC and a best-in-class drain source resistance (RDS(on)) of 1.2 mΩ, it significantly lowers switching losses compared to prior generation devices and competitor alternatives.

The MOSFET integrates a Zener diode for ESD protection, enhancing its robustness in noisy electrical environments. It meets automotive-grade qualification AEC-Q101 and complies with RoHS requirements, making it suitable for automotive and industrial applications.

Up to 0.6% efficiency improvement over previous models. Low RDS(on) of 1.2 mΩ for high conductivity. Typical gate charge of 80 nC enabling faster switching. Compact ThinPAK 5x6 mm package with 1 mm thickness. Integrated Zener diode for ESD robustness.

Wide operating temperature from -55°C to 150°C for extreme conditions. Compliant with RoHS and automotive standard AEC-Q101. Maximum continuous power dissipation of 43 W.

This MOSFET is ideal for designers aiming for high-efficiency power supplies in industrial, automotive, commercial, and consumer electronic equipment. Its compact size allows for innovative PCB layouts and enhanced thermal performance.

Explore more Infineon MOSFET products and related semiconductor components on EnvMart for optimal power management solutions.