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Infineon IPL N-Channel MOSFET 9.4 A, 700 V, 5-Pin ThinPAK 5x6 IPLK70R750P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 6.35mm |
| Model | IPLK70R750P7ATMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 25.5W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 3V |
| Forward Voltage Vf | 900mV |
Key Features
- The ThinPAK 5x6 package offers a small 5x6 mm footprint and low 1 mm height.
- Designed for excellent thermal behavior and extremely low power losses.
- Integrated ESD protection diode for durability.
- Optimized for flyback topologies and industrial applications.
- Fully qualified to JEDEC and RoHS standards with AEC-Q101 automotive compliance.
- Low switching losses and best-in-class reliability.
- Wide range of RDS(on) values to suit diverse applications.
- Surface mount design with 5 pins for ease of PCB integration.
Product Description
Infineon IPLK70R750P7ATMA1 is a high-performance N-Channel MOSFET designed for power electronics applications requiring robust performance and compact design. This device offers a maximum continuous drain current of 9.4 A and a maximum drain-source voltage of 700 V, making it suitable for demanding electrical load conditions.
The ThinPAK 5x6 package provides a very small footprint of 5x6 mm² and a low profile of 1 mm height, enabling high power density and compact PCB layouts. The MOSFET features extremely low conduction and switching losses, together with excellent thermal characteristics to enhance efficiency and reliability in power conversion systems.
Integrated ESD protection diode safeguards the device from electrostatic discharge damage, and the device shows low switching glosses (Eoss) that contribute to reducing electromagnetic interference. The IPLK70R750P7ATMA1 is fully qualified according to JEDEC standards for industrial applications and complies with the AEC-Q101 automotive standard, ensuring high quality and ruggedized performance.
This MOSFET series is optimized particularly for flyback topologies, commonly used in switching power supplies and energy conversion. With a forward voltage of 900 mV and a low RDS(on) of 1.2 mΩ, it delivers efficient switching and minimal power dissipation (max 25.5 W).
The product is RoHS compliant and suitable for surface mounting with its 5-pin configuration. Operating temperature ranges from -55°C to 150°C, accommodating a wide variety of industrial and automotive environments.
The ThinPAK 5x6 package provides a compact footprint and low height. Optimized for flyback topologies with low losses and excellent thermal behaviour. Includes integrated ESD protection diode for enhanced durability. Qualified per JEDEC standards and AEC-Q101 for industrial and automotive use.
Wide operating temperature range from -55°C to 150°C. Low RDS(on) resistance and gate charge for efficient switching.
The IPLK70R750P7ATMA1 MOSFET is ideal for industrial electronics, power supply units, automotive applications, and other demanding environments requiring reliable, high-efficiency power switching components. For further designs and integration, 3D models, schematics, and footprints are available to assist printed circuit board development.
Explore more MOSFETs and power semiconductor solutions on EnvMart for your industrial and commercial electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for the IPLK70R750P7ATMA1 is 9.4 A.
This model has a maximum drain-source voltage rating of 700 V.
The IPLK70R750P7ATMA1 uses a ThinPAK 5x6 package type.
The maximum drain-source resistance (RDS(on)) for this MOSFET is 1.2 mΩ.
The operating temperature range for the IPLK70R750P7ATMA1 is from -55°C to 150°C.
Yes, it features an integrated ESD protection diode for enhanced durability.
The typical gate charge (Qg) at Vgs is 80 nC.
It is fully qualified according to JEDEC standards and complies with AEC-Q101 for automotive applications.
The IPLK70R750P7ATMA1 has a maximum power dissipation of 25.5 W.
The forward voltage (Vf) for this model is 900 mV.
This MOSFET has a pin count of 5.
It is optimized particularly for flyback topologies, commonly used in switching power supplies and energy conversion applications.
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