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Vishay N-Channel Depletion MOSFET, 63.7 A, 60 V, 83 W PowerPAK SO-8 Surface Mount SiR516DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SiR516DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 63.7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.01Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Depletion mode MOSFET with very low drain-source resistance of 0.01 Ω.
- Maximum power dissipation of 83 W supports high-power applications.
- Wide operating temperature range from -55°C to 125°C.
- Typical gate charge of 56 nC at specified gate voltage enhances fast switching performance.
- Compliant with automotive standard AEC-Q101 for reliable automotive applications.
- Compact width of 5.15 mm enables space-saving PCB design.
- Surface mount device with 8 pins suitable for automated assembly.
Product Description
Vishay SiR516DP-T1-RE3 is an advanced Gen IV trench power N-Channel depletion MOSFET robustly designed for demanding power electronic applications. It supports a continuous drain current of 63.7 A and can withstand a maximum drain-source voltage of 60 V with exceptionally low Rds(on) of 0.01 Ω, which minimizes conduction losses and improves efficiency.
This device is engineered for surface mount technology and resides in an 8-pin PowerPAK SO-8 package, offering compact form factor and reliable thermal performance with maximum power dissipation capability of 83 W.
Its typical gate charge of 56 nC at specified gate voltage ensures rapid switching, suitable for power supply circuits, motor drive control, and synchronous rectification tasks in industrial, automotive, and manufacturing domains.
Vishay SiR516DP-T1-RE3 operates reliably across a wide temperature range from -55°C to 125°C. It meets stringent automotive standards AEC-Q101 ensuring quality and durability in automotive electronics.
The device's 5.15 mm width facilitates efficient PCB layout for space-constrained applications. It is ideal for assembly on surface mount boards where high performance and compact size are necessary.
Depletion mode MOSFET with low on-resistance. High continuous drain current and power dissipation. Wide operation temperature ranges for challenging environments. Compliance with automotive reliability standards. Compact 8-pin surface mount PowerPAK SO-8 package.
Applications in power conversion, motor drives, and synchronous rectification. Suitable for industrial, automotive, laboratory, and manufacturing uses.
Explore the Electronics & Electricals section on EnvMart for more advanced MOSFET devices and discrete semiconductor components from Vishay for your demanding engineering projects.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 63.7 A.
It can withstand a maximum drain-source voltage of 60 V.
The maximum power dissipation is 83 W, suitable for high-power applications.
The typical gate charge at the specified gate voltage is 56 nC.
It operates reliably across a wide temperature range from -55°C to 125°C.
This model is packaged in an 8-pin PowerPAK SO-8 surface mount configuration.
It complies with the automotive standard AEC-Q101, ensuring reliability in automotive applications.
The width of this model is 5.15 mm, allowing for space-efficient PCB design.
The maximum drain-source resistance (Rds(on)) is 0.01 Ω, minimizing conduction losses.
It features an N-channel design, specifically a depletion mode MOSFET.
This MOSFET has 8 pins, suitable for automated assembly.
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