onsemi N-Channel IGBT, 120 A, 650 V, 3-Pin TO-3PN Package, Through Hole Mount FGA60N65SMD

onsemi FGA60N65SMD is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications requiring high efficiency and fast switching capabilities. Rated at a maximum continuous collector current of 120 Amperes and a collector-emitter voltage of 650 Volts, this device delivers reliable performance in demanding industrial environments.

Encapsulated in a 3-Pin TO-3PN package, the FGA60N65SMD supports through-hole mounting which simplifies integration into power electronics circuits. Its maximum power dissipation capacity of 600 Watts allows handling significant power loads, making it suitable for applications such as motor drives, inverters, welding equipment, and power supplies.

The device exhibits a maximum collector-emitter saturation voltage (VceSAT) of 2.5 Volts, contributing to reduced energy loss during conduction. With a gate-emitter voltage tolerance of ±20 Volts, it ensures stable gate control under varying electrical conditions. The switching speed of 140 nanoseconds facilitates rapid switching cycles critical for efficient power conversion.

The transistor functions reliably across a broad temperature range from -55 degrees Celsius to 175 degrees Celsius, endorsing its use in harsh industrial and commercial environments. Compliance with RoHS directives guarantees the product meets environmental safety standards by restricting hazardous substances.

Belonging to the Field Stop series, this IGBT is optimized for performance in power electronics but does not conform to automotive standards, indicating its primary focus on general industrial and electronic component markets.

The device features a 3-Pin TO-3PN package suitable for through-hole mounting. It supports a maximum power dissipation of 600W, enabling high power operations. Maximum collector-emitter saturation voltage is 2.5V for low conduction losses.

Operating temperature range spans from -55°C up to 175°C, suitable for industrial use. The maximum gate-emitter voltage rating is ±20V, providing robust gate drive tolerance. The switching speed is approximately 140ns, ensuring rapid device response.

This IGBT device complies with RoHS standards for environmental safety. It belongs to the Field Stop series, optimized for performance in power electronics. The component is not certified for automotive standards, intended for general industrial applications.

This onsemi FGA60N65SMD IGBT is ideal for use in industrial, manufacturing, and power conversion setups requiring robust, efficient power switching. Explore a broad range of semiconductor components in our Electronics & Electricals category for more options.