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Infineon N-Channel IGBT 40 A 1200 V 3-Pin TO-247 Through Hole IKW40N120T2FKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKW40N120T2FKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 8.3mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | Pb-Free, RoHS, JEDEC |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 480W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Maximum continuous collector current is 40 amperes.
- Maximum collector-emitter voltage rating is 1200 volts.
- Power dissipation capacity up to 480 watts.
- Package type is TO-247 suitable for through-hole mounting.
- Channel type is N-channel for enhanced performance.
- Maximum gate-emitter voltage stands at 20 volts.
- Operating temperature ranges from -40°C to 175°C.
- Low collector-emitter saturation voltage of 2.2 volts enhances efficiency.
Product Description
Infineon IKW40N120T2FKSA1 N-Channel IGBT is a robust power transistor designed for efficient switching and high power handling in industrial electronics and power management systems. Featuring a maximum continuous collector current of 40 A and a collector-emitter voltage rating of 1200 V, this device is built to handle demanding operational conditions.
Encased in a 3-pin TO-247 package with through-hole mounting, it offers ease of integration into power boards and modules commonly used in industrial, automotive, and manufacturing controls. The transistor utilizes the TrenchStop technology providing very low saturation voltage and minimizing switching losses for energy-efficient operation.
With a maximum power dissipation of 480 W and a switching speed of 1 MHz, the IKW40N120T2FKSA1 is suitable for high-frequency power conversion applications, such as inverters, motor drives, and industrial power supplies.
The device supports a wide operating temperature range from -40°C to 175°C, ensuring reliable performance in harsh environments. It complies with Pb-Free, RoHS, and JEDEC standards, making it environmentally friendly and standardized for quality assurance.
Maximum continuous collector current of 40 A enables high power control. Collector-emitter voltage rating of 1200 V provides high voltage tolerance. TrenchStop technology delivers low on-state losses and fast switching. Three-pin TO-247 package supports easy mounting and heat dissipation.
Wide operating temperature range from -40°C to 175°C ensures durability. Maximum gate-emitter voltage of 20 V allows safe switching operations. Energy rating of 8.3 mJ for safe energy handling. Low saturation voltage of 2.2 V helps improve system efficiency.
Compliant with Pb-Free, RoHS, and JEDEC standards. Ideal for industrial power electronics, automotive, HVAC, and manufacturing systems.
This IGBT transistor is ideal for use in industrial, laboratory, automotive, and manufacturing applications requiring efficient power switching solutions. Its robust construction and certified standards ensure reliable performance and long device life.
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Frequently Asked Questions
The maximum continuous collector current for this model is 40 amperes.
It has a collector-emitter voltage rating of 1200 volts.
The power dissipation capacity is up to 480 watts.
This model comes in a TO-247 package suitable for through-hole mounting.
The operating temperature ranges from -40°C to 175°C.
The maximum gate-emitter voltage stands at 20 volts.
It utilizes TrenchStop technology, which provides very low saturation voltage and minimizes switching losses.
The maximum collector-emitter saturation voltage is 2.2 volts.
It complies with Pb-Free, RoHS, and JEDEC standards.
The energy rating is 8.3 mJ for safe energy handling.
This model has a pin count of 3.
It is suitable for industrial, automotive, HVAC, and manufacturing applications requiring efficient power switching solutions.
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