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Vishay N-Channel MOSFET PowerPAK SO-8 Surface Mount, 100 A, 60 V, Depletion Mode, 8-Pin SIR512DP-T1-RE3

Category MOSFETs Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Model SIR512DP-T1-RE3
Width 5.15mm
Mount Type Surface
Maximum Operating Temperature 125°C
Package Type PowerPAK SO-8
Minimum Operating Temperature -55°C
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 0.01Ω
Channel Mode Depletion
Maximum Power Dissipation Pd 83W
Typical Gate Charge Qg @ Vgs 56nC
Maximum Gate Source Voltage Vgs 20V

Key Features

  • Operates in depletion mode with very low drain-source resistance of 0.01 ohm.
  • PowerPAK SO-8 package ensures efficient thermal dissipation.
  • Maximum power dissipation rating of 83 watts allows high power applications.
  • Typical gate charge of 56 nC facilitates fast switching.
  • Wide operating temperature range from -55°C to 125°C supports harsh environments.
  • Complies with automotive AEC-Q101 standard for reliability.
  • Suitable for power supplies, motor drive control, and synchronous rectification.
  • Surface mount type with 8 pins simplifies PCB integration.

Product Description

Vishay SIR512DP-T1-RE3 is a Gen IV power N-Channel MOSFET designed for high-performance power electronics applications. Featuring a power-dissipating PowerPAK SO-8 surface mount package and 8 pins, this depletion-mode MOSFET supports a maximum continuous drain current of 100 amperes and a maximum drain-source voltage of 60 volts.

It exhibits an exceptionally low drain-source resistance (Rds) of 0.01 ohm, optimizing efficiency in power switching and reducing heat generation. The device's typical gate charge of 56 nanocoulombs enables rapid gate switching essential for high-frequency operation.

Operating temperature ranges from -55°C up to 125°C, ensuring reliable performance in industrial and automotive environments. The product conforms to the AEC-Q101 automotive standard, making it suitable for demanding automotive applications.

Applications include power supply circuits, motor drive control units, and synchronous rectification in power management systems. Its robust design handles power dissipation up to 83 watts, supporting heavy load conditions.

Low Rds(on) reduces conduction losses for improved efficiency. Depletion mode enables normally-on device operation when gate voltage is zero. Compact PowerPAK SO-8 package balances performance and space-saving footprint.

Wide operating temperature range permits use in extreme temperature conditions. Automotive grade compliance ensures device longevity and reliability. Fast switching capability supports dynamic power electronic systems. Surface mount design facilitates modern PCB manufacturing processes.

Pin count and layout support straightforward integration into electronic assemblies.

This Vishay MOSFET is a reliable component choice for applications in industrial controls, automotive power electronics, HVAC systems, manufacturing equipment, and laboratory instrumentation.

Explore more power management components and MOSFET options at EnvMart to meet your specific engineering requirements.

Explore more products in our MOSFETs category.

Vishay N-Channel MOSFET PowerPAK SO-8 Surface Mount, 100 A, 60 V, Depletion Mode, 8-Pin SIR512DP-T1-RE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 100 amperes.

It has a maximum drain-source voltage rating of 60 volts.

The device exhibits a low drain-source resistance (Rds) of 0.01 ohm.

The typical gate charge is 56 nanocoulombs, which facilitates fast switching.

It operates within a temperature range of -55°C to 125°C.

This model complies with the AEC-Q101 automotive standard for reliability.

It comes in a PowerPAK SO-8 surface mount package with 8 pins.

The maximum power dissipation rating is 83 watts.

It is an N-channel MOSFET operating in depletion mode.

It is suitable for power supplies, motor drive control, and synchronous rectification.

The maximum gate-source voltage is 20 volts.

The width of this model is 5.15 mm.

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