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Vishay P-Channel MOSFET PowerPAK 1212-8W, 214 A Continuous Drain Current, 40 V, Enhancement Mode SQS405CENW-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 3.3mm |
| Model | SQS405CENW-T1_GE3 |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK 1212-8W |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 214A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.02Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 197W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Designed for high power density applications.
- Maximum continuous drain current of 214 A for robust performance.
- 40 V maximum drain source voltage rating.
- Surface mount PowerPAK 1212-8W package with 8 pins.
- Enhancement mode channel providing efficient switching.
- Maximum power dissipation of 197 W for high thermal capacity.
- IEC automotive standard qualified AEC-Q101 for reliability.
- Operating temperature range from -55°C to 125°C.
Product Description
Vishay SQS405CENW-T1_GE3 is a robust P-Channel MOSFET designed for high power density and automotive applications. It features a maximum continuous drain current of 214 A and operates at a maximum drain source voltage of 40 V. Packaged in an 8-pin PowerPAK 1212-8W surface mount, this enhancement mode MOSFET is engineered to deliver reliable and efficient switching performance across a wide temperature range from -55°C to 125°C.
This MOSFET offers a low maximum drain source resistance of 0.02 Ω, which helps minimize power losses and improve thermal efficiency in demanding industrial and automotive systems. With a typical gate charge of 38 nC, it supports fast switching speeds suitable for high-frequency power electronics.
The device is qualified to the AEC-Q101 automotive standard, ensuring durability and performance in critical automotive environments. Its maximum power dissipation capability is 197 W, supporting high thermal loads typically encountered in power conversion and motor control circuits.
This MOSFET is ideal for use in industrial, automotive, and power management systems requiring a high current P-Channel semiconductor device. The surface mount form factor ensures compatibility with compact PCB designs needing efficient power handling.
Designed for high power density applications. Maximum continuous drain current of 214 A. 40 V maximum drain source voltage rating. Surface mount PowerPAK 1212-8W package with 8 pins. Enhancement mode channel for efficient switching.
Maximum power dissipation of 197 W. AEC-Q101 automotive standard qualified. Operating temperature range: -55°C to 125°C. Low maximum drain source resistance of 0.02 Ω. Typical gate charge: 38 nC.
Explore the Vishay MOSFET product range on EnvMart for advanced power semiconductor solutions suitable for electronic manufacturing, automotive, industrial control, and high efficiency power circuits.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 214 A, providing robust performance for high power density applications.
This model has a maximum drain source voltage rating of 40 V, suitable for various applications in power management.
It is packaged in a PowerPAK 1212-8W surface mount configuration with 8 pins, designed for efficient PCB integration.
The operating temperature range is from -55°C to 125°C, making it suitable for both industrial and automotive environments.
It has a maximum power dissipation capability of 197 W, which supports high thermal loads in power conversion applications.
The typical gate charge is 38 nC, allowing for fast switching speeds in high-frequency power electronics.
The maximum drain source resistance is 0.02 Ω, which helps minimize power losses and improve thermal efficiency.
Yes, it is qualified to the AEC-Q101 automotive standard, ensuring reliability in automotive applications.
This model features an enhancement mode channel, which provides efficient switching performance.
The maximum gate source voltage for this MOSFET is 20 V, which is important for ensuring proper operation in circuits.
The forward voltage of this MOSFET is 1.1 V, which is relevant for understanding its performance in specific applications.
The country of origin for this model is India, indicating where it was manufactured.
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