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Vishay N-Channel MOSFET, 445 A, 30 V Depletion Mode, 4-Pin PowerPAK (8x8L) Surface Mount SQJQ150E-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SQJQ150E-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK (8x8L) |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 445A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.0019Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
| Nexperia N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK88 BUK7S2R0-40HJBrand | Nexperia |
Key Features
- Features a 4-pin PowerPAK (8x8L) surface-mount package ensuring efficient heat dissipation.
- Supports maximum continuous drain current of 445 A for heavy-duty operations.
- Operates with a maximum drain source voltage of 30 V and a gate source voltage up to 20 V.
- Low maximum drain source resistance of 0.0019 ohms reduces power losses.
- Typical gate charge of 43 nC at Vgs ensures fast switching performance.
- Maximum power dissipation of 255 W allows for robust applications.
- Temperature range from -55°C to 125°C suitable for automotive environments.
- Complies with AEC-Q101 automotive standard and is UIS tested for reliability.
Product Description
Vishay SQJQ150E-T1_GE3 is an automotive-grade N-Channel MOSFET designed for use in high power density applications requiring robust performance at elevated temperatures and currents. It supports a maximum continuous drain current of 445 A and operates up to 30 V, making it suitable for demanding electronic components, power management, and automotive systems.
This device is housed in a compact 4-pin PowerPAK (8x8L) surface mount package that provides excellent thermal performance. The MOSFET operates in depletion mode, offering low on-resistance with a maximum Rds(on) of 0.0019 ohms, enhancing energy efficiency in switching applications.
Key specifications include a typical gate charge of 43 nC at gate-source voltage, a maximum power dissipation rating of 255 W, and an operating temperature range of -55°C to 125°C, ensuring reliable operation in harsh climates and automotive environments.
The SQJQ150E-T1_GE3 also complies with the AEC-Q101 automotive standard and is UIS tested, confirming its suitability for automotive and industrial use cases such as power control units, motor drives, and power converters.
4-pin PowerPAK (8x8L) surface-mount package for effective heat management. High current capacity of 445 A for heavy load handling. Low on-resistance reduces power losses. Wide operating temperature range supports automotive applications.
Compliant with automotive industry standards. Ideal for industrial, automotive, and power management systems. Explore the Vishay range of MOSFETs at EnvMart for reliable high-performance components suitable for electronic and automotive manufacturing and repair.
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Frequently Asked Questions
The maximum continuous drain current for this model is 445 A, suitable for heavy-duty operations.
It operates with a maximum drain source voltage of 30 V.
The typical gate charge at gate-source voltage (Vgs) is 43 nC, which ensures fast switching performance.
This model has a maximum power dissipation rating of 255 W, allowing for robust applications.
The operating temperature range is from -55°C to 125°C, making it suitable for automotive environments.
It is housed in a 4-pin PowerPAK (8x8L) surface mount package, which ensures efficient heat dissipation.
The maximum gate source voltage (Vgs) is 20 V.
The maximum drain source resistance (Rds(on)) is 0.0019 ohms, which helps reduce power losses.
It complies with the AEC-Q101 automotive standard, ensuring its reliability for automotive applications.
The dimensions are 6.15 mm in length and 4.9 mm in width.
This model features an N-channel configuration, operating in depletion mode.
It is suitable for high power density applications, including power management and automotive systems.
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