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Vishay N-Channel MOSFET 445 A, 30 V Depletion Mode 4-Pin PowerPAK (8x8L) SQJQ112E-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SQJQ112E-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK (8x8L) |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 445A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.00253Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET supports a maximum continuous drain current of 445 A.
- It has a maximum drain-source voltage rating of 30 V.
- The device is packaged in a compact 4-Pin PowerPAK (8x8L) surface-mount package.
- Featuring a low drain-source resistance of 0.00253 Ω for minimal conduction loss.
- Capable of dissipating up to 255 W of power under operating conditions.
- It operates reliably in temperatures ranging from -55°C to 125°C.
- Typical gate charge at Vgs is 43 nC, enabling fast switching operations.
- Designed with automotive-grade AEC-Q101 qualification ensuring high reliability.
Product Description
Vishay SQJQ112E-T1_GE3 is a high-performance N-Channel MOSFET designed for power electronics applications requiring high current handling and thermal stability. This depletion mode MOSFET supports a continuous drain current of up to 445 A and withstands a maximum drain-source voltage of 30 V. Its PowerPAK (8x8L) 4-pin surface mount package allows for efficient heat dissipation while maintaining a compact form factor with dimensions of 6.15 mm length and 4.9 mm width.
The device boasts a low maximum drain-source resistance of 0.00253 Ω, minimizing power losses and improving efficiency in switching circuits. Its maximum power dissipation rating of 255 W suits demanding industrial and automotive environments. The MOSFET is qualified according to the AEC-Q101 automotive standard, making it ideal for automotive power management and control systems.
Operating temperature ranges from -55°C to 125°C, providing robust performance across harsh environments. Typical gate charge of 43 nC at Vgs supports high-speed switching. The forward voltage drop of 1.1 V further contributes to low conduction losses, optimizing power efficiency.
This MOSFET is engineered for applications in industrial, automotive, and power conversion systems. Its thin, surface mount PowerPAK package facilitates compact PCB designs with effective thermal management. The device is tested under rigorous conditions including UIS testing to ensure reliability.
Suitable for high power density circuits requiring robust, efficient switching elements. Package contains a 4-pin configuration enhancing easy integration into surface mount circuits.
For engineers and designers requiring a reliable, automotive grade power MOSFET, the Vishay SQJQ112E-T1_GE3 provides exceptional electrical performance and thermal management. EnvMart offers this product within the Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 445 A.
The maximum drain-source voltage rating is 30 V.
It is packaged in a PowerPAK (8x8L) surface-mount package.
The operating temperature range is from -55°C to 125°C.
The maximum power dissipation rating is 255 W.
The typical gate charge at Vgs is 43 nC.
The maximum drain-source resistance is 0.00253 Ω.
This MOSFET is qualified according to the AEC-Q101 automotive standard.
The dimensions are 6.15 mm in length and 4.9 mm in width.
This device features an N-channel type.
The forward voltage drop is 1.1 V.
The package contains a 4-pin configuration.
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