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Vishay EF N-Channel Power MOSFET, 6.5 A, 850 V Depletion Mode, TO-220 3-Pin Surface Mount SiHA17N80AEF-GE3

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Vishay EF N-Channel Power MOSFET, 6.5 A, 850 V Depletion Mode, TO-220 3-Pin Surface Mount SiHA17N80AEF-GE3

Name: Vishay EF N-Channel Power MOSFET, 6.5 A, 850 V Depletion Mode, TO-220 3-Pin Surface Mount SiHA17N80AEF-GE3
Brand: Vishay
SKU: 296342
Price: 5.54 USD
Availability: InStock

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Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Model	SiHA17N80AEF-GE3
Mount Type	Surface
Series	EF
Maximum Operating Temperature	+150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	6.5A
Maximum Drain Source Voltage Vds	850V
Maximum Drain Source Resistance Rds	0.305Ω
Channel Mode	Depletion
Maximum Power Dissipation Pd	34W
Typical Gate Charge Qg @ Vgs	63nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

Maximum continuous drain current of 6.5 amperes enabling moderate load switching.
Drain-source voltage rating of 850 volts suitable for high-voltage power applications.
Low on-resistance of 0.305 ohms to reduce conduction losses under load.
Typical gate charge of 63 nanocoulombs reduces switching energy consumption.
Supports maximum power dissipation of 34 watts with efficient heat sinking in TO-220 package.
Operates within a wide temperature range from -55°C to +150°C ensuring reliability.
Meets automotive industry standard AEC-Q101 for robust performance in vehicles.
Includes features for use in power converters, industrial motor drives, and renewable energy systems.

Product Description

Vishay SiHA17N80AEF-GE3 is a high-voltage N-Channel Power MOSFET with depletion mode, designed for demanding switching and power management roles in industrial and automotive electronics. Featuring a maximum continuous drain current of 6.5 A and a drain-source voltage rating of 850 V, it supports applications that require durable high-voltage switching.

The device is packaged in a TO-220 3-pin surface mount configuration, which facilitates excellent thermal dissipation and supports a maximum power dissipation of 34 W when mounted properly. Its low on-resistance (Rds) of 0.305 Ω minimizes conduction losses, while the typical gate charge of 63 nC lowers the switching energy demands, enhancing overall efficiency.

This MOSFET operates reliably across a broad temperature range from -55°C to +150°C, making it highly suitable for environments exposed to extreme temperatures. It conforms to the automotive standard AEC-Q101, ensuring stringent quality and durability for use in automotive systems.

The depletion-mode channel means the device conducts by default and requires gate biasing to turn off, which influences circuit topology design. Its high-voltage rating and 3-pin TO-220 package make it ideal for power electronic converters, industrial motor drives, switch-mode power supplies, and renewable energy power switching.

Maximum continuous drain current of 6.5 A for moderate loads. Drain-source voltage rating of 850 V for high-voltage applications. Low Rds(on) of 0.305 Ω reduces conduction losses efficiently. Typical gate charge of 63 nC lowers switching energy consumption.

Maximum power dissipation of 34 W with TO-220 heat sinking. Wide operating temperature range (-55°C to +150°C) for harsh environments. Meets automotive AEC-Q101 standard for reliability. Ideal for high-voltage power converters, industrial drives, and renewable energy inverters.

This product is part of the Vishay EF series and is RoHS compliant, suitable for advanced industrial, automotive, and power management applications. Explore more high-quality Power MOSFETs and semiconductor components on EnvMart for your industrial electronics projects and power system designs.

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Frequently Asked Questions

The maximum continuous drain current for this model is 6.5 amperes, enabling it to handle moderate load switching applications.

This MOSFET has a drain-source voltage rating of 850 volts, making it suitable for high-voltage power applications.

The on-resistance (Rds(on)) of the SiHA17N80AEF-GE3 is 0.305 ohms, which helps reduce conduction losses under load.

It supports a maximum power dissipation of 34 watts when properly heat sunk in the TO-220 package.

The typical gate charge for this model is 63 nanocoulombs, which lowers the switching energy consumption.

This unit operates reliably across a wide temperature range from -55°C to +150°C, suitable for harsh environments.

It meets the automotive industry standard AEC-Q101, ensuring robust performance in automotive applications.

This model is packaged in a TO-220 3-pin surface mount configuration, which facilitates excellent thermal dissipation.

The SiHA17N80AEF-GE3 is an N-channel MOSFET, which means it conducts by default and requires gate biasing to turn off.

The maximum gate-source voltage (Vgs) for this MOSFET is 30 volts.

Yes, the SiHA17N80AEF-GE3 is RoHS compliant, making it suitable for environmentally conscious applications.

It is ideal for use in power converters, industrial motor drives, and renewable energy systems due to its high-voltage and power management capabilities.