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Vishay N-Channel Depletion MOSFET 60 V 42.4 A PowerPAK SO-8 Surface Mount 8-Pin SIR576DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIR576DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42.4A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.02Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- This MOSFET operates in depletion mode suitable for power supply and motor drive control applications.
- It delivers a maximum continuous drain current of 42.4 amperes.
- The device has a maximum drain-source voltage (Vds) of 60 volts for robust operation.
- Optimized for surface mount technology with an 8-pin PowerPAK SO-8 package.
- Features a low drain-source resistance of 0.02 ohms.
- Supports a maximum gate-source voltage of ±20 volts.
- Capable of dissipating up to 83 watts of power.
- Operates reliably in a temperature range from -55°C to 125°C.
Product Description
The Vishay SIR576DP-T1-RE3 is a high-performance N-Channel Depletion MOSFET engineered for demanding industrial and automotive applications. This semiconductor device features a continuous drain current capacity of 42.4 A and withstands a maximum drain-source voltage of 60 V, making it ideal for efficient power management and motor control circuits.
Housed in an 8-pin PowerPAK SO-8 package optimized for surface mount technology (SMT), it ensures minimal footprint and enhanced thermal dissipation. The device's low drain-source resistance of 0.02 Ω contributes to low conduction losses and improved efficiency.
Designed to operate within a broad temperature range of -55°C to 125°C, this MOSFET is suitable for harsh environments typical in automotive and industrial domains. It supports a maximum gate-source voltage of ±20 V and offers a typical gate charge of 56 nC at Vgs, enabling fast switching performance.
The SIR576DP-T1-RE3 complies with the AEC-Q101 automotive standard, emphasizing its robustness and reliability in automotive electronic systems. Its applications include power supply regulation, synchronous rectification, and motor drive control.
Depletion mode operation for precise power control. Exceptional current handling of 42.4 A continuous drain current. High voltage tolerance up to 60 V drain-source voltage. Compact and efficient 8-pin PowerPAK SO-8 surface mount packaging.
Low on-resistance minimizing power losses. Wide operating temperature range from -55°C to 125°C. Robustness certified to automotive standard AEC-Q101. Typical gate charge of 56 nC for rapid switching.
Suitable for use in industrial power management, automotive electronics, manufacturing devices, and high-performance motor control applications. For detailed technical drawings and further product documents, users can refer to the official Vishay datasheets and technical resources.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 42.4 amperes.
This model has a maximum drain-source voltage of 60 volts.
The MOSFET is housed in an 8-pin PowerPAK SO-8 package, optimized for surface mount technology.
It operates reliably within a temperature range from -55°C to 125°C.
The maximum power dissipation for this MOSFET is 83 watts.
The typical gate charge at Vgs is 56 nC.
It complies with the AEC-Q101 automotive standard, indicating its suitability for automotive applications.
The maximum gate-source voltage supported is ±20 volts.
The maximum drain-source resistance is 0.02 ohms.
This model features an N-channel type, operating in depletion mode.
The width of this MOSFET is 5.15 mm, fitting within the compact PowerPAK SO-8 design.
This MOSFET is suitable for applications such as power supply regulation, synchronous rectification, and motor drive control.
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