$2.28
$2.21
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay EF N-Channel Power MOSFET 6A Continuous Drain Current 850V Drain-Source Voltage TO-220 3-Pin SIHA15N80AEF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHA15N80AEF-GE3 |
| Mount Type | Surface |
| Series | EF |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 850V |
| Maximum Drain Source Resistance Rds | 0.35Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 33W |
| Typical Gate Charge Qg @ Vgs | 54nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 6 amperes supports medium power applications.
- High 850 volts drain-source voltage enables usage in demanding switching environments.
- Low drain-source resistance of 0.35 ohms minimizes conduction losses.
- Maximum power dissipation of 33 watts allows sustained operation under thermal stress.
- Typical gate charge of 54 nanocoulombs facilitates predictable gate drive behavior.
- Rated for operating temperatures from -55°C up to +150°C for a wide ambient range.
- Gate-source voltage tolerance of ±30 volts protects against excessive gate stress.
- Complies with RoHS standards and automotive AEC-Q101 standard for reliable automotive electronics use.
Product Description
Vishay SIHA15N80AEF-GE3 is an EF series N-channel power MOSFET designed to deliver high-voltage switching and power management capabilities in industrial and automotive environments. It supports a continuous drain current of 6 A and a maximum drain-source voltage of 850 V, making it well suited for medium power loads requiring efficient performance and reliability.
The device features a TO-220 package with 3 pins optimized for surface mounting and thermal management via heatsinks. Its low drain-source resistance of 0.35 ohms helps reduce conduction losses, while the typical gate charge of 54 nanocoulombs ensures predictable gate-drive performance facilitating appropriate driver current selection and switching speed trade-offs.
Designed for robustness, the MOSFET operates reliably across a wide ambient temperature range from -55°C to +150°C. It has a gate-source voltage rating of ±30 V, which protects against gate overstress. The device also complies with industry standards including RoHS and the automotive AEC-Q101 standard, confirming its suitability for automotive electronics use.
Applications include high-voltage industrial power converters, switch-mode power supplies, motor drive front-ends, inverters, and auxiliary power supplies requiring dependable switching performance in harsh environments. Its depletion-mode operation requires proper biasing but enables specific circuit design advantages.
Maximum continuous drain current: 6 A. Maximum drain-source voltage: 850 V. Package type: TO-220, 3-pin surface mount. Maximum power dissipation: 33 W. Operating temperature range: -55°C to +150°C. Typical gate charge at Vgs: 54 nC.
Maximum gate-source voltage: ±30 V. Low on-resistance (Rds(on)) of 0.35 Ω. Forward voltage Vf of 1.2 V. RoHS compliant with automotive AEC-Q101 certification.
This Vishay EF N-Channel Power MOSFET SIHA15N80AEF-GE3 is ideal for demanding industrial and automotive power switching applications. For more specialized electronics components, browse EnvMart’s comprehensive semiconductor and MOSFET catalog for reliable performance in your applications.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 6 amperes.
This MOSFET has a maximum drain-source voltage rating of 850 volts.
It comes in a TO-220 package with a 3-pin configuration optimized for surface mounting.
The operating temperature range is from -55°C to +150°C.
The typical gate charge at Vgs is 54 nanocoulombs.
It has a maximum power dissipation of 33 watts.
The low drain-source resistance (Rds(on)) is 0.35 ohms.
This model complies with the automotive AEC-Q101 standard.
Yes, this MOSFET is RoHS compliant.
It is suitable for high-voltage industrial power converters, switch-mode power supplies, motor drive front-ends, and inverters.
The maximum gate-source voltage rating is ±30 volts.
This model features an N-channel type configuration.
Related Products
Other Products from this brand
$1.64
$1.59
-3%
New
$1.99
$1.93
-3%
New
$1.69
$1.64
-3%
New
$1.82
$1.77
-3%
New
$1.54
$1.50
-3%
New
$1.61
$1.57
-3%
New
$2.28
$2.21
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent