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Infineon N-Channel Power MOSFET, 35 A, 80 V, 3-Pin TO-220 IPP016N08NF2SAKMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP016N08NF2SAKMA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | IPP016N08NF2S |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 35A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 1.1mΩ |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 170nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports a maximum continuous drain current of 35 amperes.
- Maximum drain-source voltage rating of 80 volts ensures robust operation.
- Low drain-source resistance of 1.1 milliohms for efficient conduction.
- Typical gate charge of 170 nanocoulombs at standard gate-source voltage.
- Maximum power dissipation rated at 300 watts for high performance.
- Operating temperature range from -55°C to 175°C for wide industrial applications.
- Comes in a 3-pin TO-220 package with dimensions suitable for through-hole mounting.
- Maximum gate-source voltage of 20 volts for gate protection.
Product Description
Infineon's IPP016N08NF2SAKMA1 is a high-performance N-Channel Power MOSFET optimized for demanding electronic applications requiring high current and voltage handling capabilities. Featuring a maximum continuous drain current rating of 35 amperes and a drain-source voltage rating of 80 volts, this device supports reliable operation in various industrial, power management, and electronic systems.
Housed in a through-hole TO-220 package with three pins, this MOSFET offers a low on-resistance of 1.1 milliohms, which enhances efficiency by minimizing power loss during conduction. The typical gate charge of 170 nanocoulombs facilitates swift switching, making it suitable for applications with fast switching requirements.
Operating within a wide temperature range from -55°C to 175°C, the MOSFET is suitable for industrial, automotive, and power electronics uses where thermal reliability is critical. The device also features a maximum power dissipation rating of 300 watts, supporting high power applications without compromising durability.
This MOSFET has a standard gate-source voltage maximum of 20 volts and a forward voltage drop of 1.2 volts, characteristics important for controlling gate threshold and ensuring effective switching. The standardized pin configuration ensures easy integration and compatibility with existing designs as a drop-in replacement.
Supports a maximum continuous drain current of 35 amperes. Maximum drain-source voltage of 80 volts. Low on-resistance of 1.1 milliohms enhances efficiency. Typical gate charge of 170 nanocoulombs for fast switching. Maximum power dissipation of 300 watts for high power handling.
Wide operating temperature range: -55°C to 175°C. 3-pin TO-220 through-hole package supports easy mounting. Maximum gate-source voltage of 20 volts for gate safety. Forward voltage of 1.2 volts ensures effective switching.
Standard pinout for easy replacement in circuits.
This Infineon MOSFET is intended for applications in power supplies, motor control, DC-DC converters, industrial electronics, and other devices requiring efficient switching with high current and voltage endurance. Its reliable construction and industry-standard packaging make it a versatile component for engineers and manufacturers.
Explore additional Infineon MOSFET products and related semiconductor components on EnvMart for your industrial and electronic equipment needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 35 amperes.
This MOSFET has a maximum drain-source voltage rating of 80 volts.
It features a low drain-source resistance of 1.1 milliohms, enhancing conduction efficiency.
The typical gate charge is 170 nanocoulombs at the standard gate-source voltage.
This device supports a maximum power dissipation of 300 watts.
It operates within a wide temperature range from -55°C to 175°C.
It comes in a 3-pin TO-220 package suitable for through-hole mounting.
The maximum gate-source voltage is 20 volts, providing gate protection.
The forward voltage drop is 1.2 volts, which is important for effective switching.
The dimensions of the TO-220 package are 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height.
This model is suitable for applications in power supplies, motor control, DC-DC converters, and industrial electronics.
This MOSFET has a pin count of 3, standard for its package type.
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