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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP026N10NF2SAKMA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | IPP026N10NF2S |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 27A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2.6mΩ |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 103nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Infineon IPP026N10NF2SAKMA1 N-Channel MOSFET is a high-power discrete semiconductor designed for demanding power switching and control applications. Featuring a 27 A maximum continuous drain current and a 100 V maximum drain-source voltage, it provides robust performance in industrial and commercial electronic circuits.
Housed in a through-hole TO-220 package with three pins, this MOSFET offers convenient mounting with direct heatsink attachment capability to maximize thermal dissipation. The low drain-source resistance of 2.6 mΩ significantly reduces conduction losses, improving overall efficiency during high-current switching operations.
The MOSFET is designed to operate reliably over an extended temperature range from -55°C to 175°C, making it ideal for harsh thermal environments in motor control circuits, power supplies, and DC-DC converters. Its typical gate charge of 103 nC enables efficient driving with moderate energy requirements, while the maximum gate-source voltage of 20 V ensures robust gate protection.
Compact physical dimensions of 10.36 mm length, 4.57 mm width, and 9.45 mm height support space-constrained applications and prototype setups where through-hole mounting is preferred.
Supports maximum continuous drain current of 27 A. Maximum drain-source voltage rating of 100 V supports various switching duties. Low on-resistance of 2.6 mΩ to reduce conduction losses. High power dissipation rating of 250 W for thermal stability.
Wide operating temperature range from -55°C to 175°C. Moderate gate charge for manageable drive energy. Robust construction with through-hole TO-220 package. Applications include power supplies, motor drivers, industrial converters, and prototyping.
This Infineon Power MOSFET provides reliability and efficient switching performance suitable for industrial, construction, laboratory, and manufacturing environments. Browse more power semiconductor devices and components at EnvMart for your next project.
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