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Infineon CoolMOS N-Channel MOSFET, 41 A, 700 V, 3-Pin TO-220 Surface Mount IPP65R225C7XKSA1

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.57mm
Length 10.36mm
Model IPP65R225C7XKSA1
Width 15.95mm
Mount Type Surface
Series CoolMOS
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 41A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 225mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 63W
Typical Gate Charge Qg @ Vgs 20nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Features CoolMOS C7 superjunction technology for lowest RDS(on) and improved efficiency.
  • Offers low conduction and switching losses to enhance overall power density.
  • Typical gate charge of 20 nC at gate-source voltage of 20 V.
  • Maximum power dissipation rating of 63 W supports thermal management.
  • Robust operation from -55°C minimum temperature to standard operating range.
  • Designed for surface mount applications with compact 10.36 mm length and 15.95 mm width.
  • Forward voltage drop of 900 mV and enhancement channel mode.
  • Three-pin TO-220 package ensures reliable mounting and integration.

Product Description

Infineon IPP65R225C7XKSA1 is a high-performance CoolMOS N-Channel MOSFET designed for industrial electronic applications requiring efficient power switching. With a maximum continuous drain current of 41 A and a drain-source voltage rating of 700 V, it delivers reliable operation in demanding environments.

This device utilizes CoolMOS C7 superjunction technology to achieve exceptionally low RDS(on) across the full load range, resulting in high efficiency and reduced power loss. Its low gate charge of 20 nC at a gate-source voltage of 20 V allows for rapid switching and improved light load efficiency.

Offered in a 3-pin TO-220 surface mount package, the MOSFET dimensions measure 10.36 mm in length, 15.95 mm in width, and 4.57 mm in height, making it suitable for compact power electronics designs.

It features an enhancement mode channel with a maximum gate-source voltage of 20 V and a forward voltage drop of 900 mV. This MOSFET is rated to dissipate up to 63 W of power, enabling it to handle considerable thermal loads within power supply modules.

Operating temperature range starts at -55°C, making it ideal for industrial automation, power supply units, solar inverters, and other energy-efficient power management systems. CoolMOS C7 superjunction technology reduces conduction and switching losses.

High continuous drain current and voltage ratings for robust power handling. Compact TO-220 surface mount package facilitates easy PCB integration. Low gate charge enables efficient switching performance. Wide operating temperature range supports industrial usage.

Enhancement channel mode design. Suitable for SMPS, solar inverters, and other power electronics.

This Infineon MOSFET forms part of a comprehensive portfolio of discrete semiconductor power components widely used across electronics manufacturing, industrial automation, and energy applications.

Browse other Power MOSFETs and discrete semiconductor products on EnvMart to find the best components for your application needs.

Infineon CoolMOS N-Channel MOSFET, 41 A, 700 V, 3-Pin TO-220 Surface Mount IPP65R225C7XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 41 A.

This MOSFET has a maximum drain-source voltage rating of 700 V.

It comes in a 3-pin TO-220 surface mount package.

The typical gate charge is 20 nC at a gate-source voltage of 20 V.

The maximum power dissipation rating for this MOSFET is 63 W.

The forward voltage drop is 900 mV.

It operates within a temperature range starting from -55°C.

The dimensions are 10.36 mm in length, 15.95 mm in width, and 4.57 mm in height.

This model features an enhancement mode channel.

It utilizes CoolMOS C7 superjunction technology for improved efficiency and reduced power loss.

The maximum gate-source voltage for this MOSFET is 20 V.

This model is suitable for applications such as power supply units, solar inverters, and industrial automation.

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