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OSI Optoelectronics Infrared Photodiode, 65° Angle of Half Sensitivity, Through Hole TO-52 Package APD05-8-150-T52L
Specifications
| Country of Origin | United States |
|---|---|
| Diameter | 5.4mm |
| Brand | OSI Optoelectronics |
| Operating Temperature | -40°C to +100°C |
| Height | 3.8mm |
| Length | 5mm |
| Model | APD05-8-150-T52L |
| Packaging | Tape & Reel |
| Width | 5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 85°C |
| Package Type | TO-52 |
| Minimum Operating Temperature | -25°C |
| Polarity | Reverse |
| Dark Current | 0.2nA |
| Standards/Approvals | RoHS |
| Number of Pins | 3 |
| Typical Fall Time | 0.6ns |
| Wavelength of Peak Sensitivity | 800nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 30V |
| Minimum Wavelength Detected | 600nm |
| Maximum Wavelength Detected | 1100nm |
| Angle of Half Sensitivity | 65 ° |
| Packages | TO-52 and TO-5 |
| Low temperature coefficient | 0.45 V/°C |
Key Features
- Optimized for 800nm wavelength infrared spectrum detection.
- Offers low noise and high sensitivity with a dark current of 0.2nA.
- Package type is TO-52 with tape and reel packaging suitable for automated assembly.
- Through hole mount style with 3 pins ensures robust mechanical and electrical connections.
- Wide operating temperature range from -40°C to +100°C for industrial use.
- Breakdown voltage rating of 30V supporting stable avalanche operation.
- Typical rise and fall times of 0.6ns enabling fast signal response.
- Not amplified, reverse polarity photodiode suitable for precise optical sensing.
Product Description
OSI Optoelectronics APD05-8-150-T52L is a high-performance infrared photodiode optimized for the 800nm wavelength, designed for precision optical detection applications. This photodiode features a 65° angle of half sensitivity and is housed in a hermetic TO-52 metal package, ensuring durability and stability in industrial and laboratory environments.
Its through hole mount type with 3 pins provides secure mechanical mounting and reliable electrical contact. The photodiode offers low noise performance, a dark current of only 0.2nA, and a high breakdown voltage of 30V, making it ideal for avalanche photodiode (APD) applications such as optical fiber communications, laser range finders, and high-speed photometry.
The device exhibits fast response times with 0.6ns typical rise and fall times, meeting the demands of high bandwidth detection up to 1GHz. It operates effectively within a wide temperature range from -40°C to +100°C, suitable for harsh industrial and commercial conditions.
Optimized sensitivity for infrared spectrum detection at 800nm wavelength. Low noise and high sensitivity with excellent dark current specification. Robust TO-52 metal package with through hole mounting. Fast response time enables high-speed photometric measurements.
Wide operating temperature for industrial, laboratory, and telecommunications use. RoHS compliant ensuring environmentally safe manufacturing standards.
Applications include optical fiber communication systems, laser distance measurement instruments, and scientific photometry equipment. The device is manufactured in the United States, guaranteeing high-quality standards and reliability.
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Frequently Asked Questions
The wavelength of peak sensitivity for this photodiode is 800nm, optimized for infrared spectrum detection.
This model has a low dark current specification of 0.2nA, contributing to its high sensitivity performance.
The breakdown voltage rating of this photodiode is 30V, which supports stable avalanche operation.
The typical rise and fall times for this photodiode are both 0.6ns, enabling fast signal response suitable for high bandwidth detection.
It operates effectively within a wide temperature range from -40°C to +100°C, making it suitable for industrial use.
This photodiode is housed in a hermetic TO-52 metal package, which provides durability and stability.
The APD05-8-150-T52L features 3 pins for secure mechanical mounting and reliable electrical contact.
The angle of half sensitivity for this photodiode is 65°, allowing for effective optical detection.
Yes, it is RoHS compliant, ensuring environmentally safe manufacturing standards.
This model can detect wavelengths from a minimum of 600nm to a maximum of 1100nm.
The photodiode is packaged in tape and reel format, which is suitable for automated assembly processes.
This photodiode is manufactured in the United States, ensuring high-quality standards and reliability.
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