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OSI Optoelectronics Infrared Photodiode, 65° Angle of Half Sensitivity, Through Hole TO-52 Package APD05-8-150-T52L

Category Photodiode Brand OSI Optoelectronics Condition New

Specifications

Country of Origin United States
Diameter 5.4mm
Brand OSI Optoelectronics
Operating Temperature -40°C to +100°C
Height 3.8mm
Length 5mm
Model APD05-8-150-T52L
Packaging Tape & Reel
Width 5mm
Mount Type Through Hole
Maximum Operating Temperature 85°C
Package Type TO-52
Minimum Operating Temperature -25°C
Polarity Reverse
Dark Current 0.2nA
Standards/Approvals RoHS
Number of Pins 3
Typical Fall Time 0.6ns
Wavelength of Peak Sensitivity 800nm
Spectrums Detected Infrared
Breakdown Voltage 30V
Minimum Wavelength Detected 600nm
Maximum Wavelength Detected 1100nm
Angle of Half Sensitivity 65 °
Packages TO-52 and TO-5
Low temperature coefficient 0.45 V/°C

Key Features

  • Optimized for 800nm wavelength infrared spectrum detection.
  • Offers low noise and high sensitivity with a dark current of 0.2nA.
  • Package type is TO-52 with tape and reel packaging suitable for automated assembly.
  • Through hole mount style with 3 pins ensures robust mechanical and electrical connections.
  • Wide operating temperature range from -40°C to +100°C for industrial use.
  • Breakdown voltage rating of 30V supporting stable avalanche operation.
  • Typical rise and fall times of 0.6ns enabling fast signal response.
  • Not amplified, reverse polarity photodiode suitable for precise optical sensing.

Product Description

OSI Optoelectronics APD05-8-150-T52L is a high-performance infrared photodiode optimized for the 800nm wavelength, designed for precision optical detection applications. This photodiode features a 65° angle of half sensitivity and is housed in a hermetic TO-52 metal package, ensuring durability and stability in industrial and laboratory environments.

Its through hole mount type with 3 pins provides secure mechanical mounting and reliable electrical contact. The photodiode offers low noise performance, a dark current of only 0.2nA, and a high breakdown voltage of 30V, making it ideal for avalanche photodiode (APD) applications such as optical fiber communications, laser range finders, and high-speed photometry.

The device exhibits fast response times with 0.6ns typical rise and fall times, meeting the demands of high bandwidth detection up to 1GHz. It operates effectively within a wide temperature range from -40°C to +100°C, suitable for harsh industrial and commercial conditions.

Optimized sensitivity for infrared spectrum detection at 800nm wavelength. Low noise and high sensitivity with excellent dark current specification. Robust TO-52 metal package with through hole mounting. Fast response time enables high-speed photometric measurements.

Wide operating temperature for industrial, laboratory, and telecommunications use. RoHS compliant ensuring environmentally safe manufacturing standards.

Applications include optical fiber communication systems, laser distance measurement instruments, and scientific photometry equipment. The device is manufactured in the United States, guaranteeing high-quality standards and reliability.

Explore more specialized optoelectronic components and Photodiodes on EnvMart for your industrial and research needs.

OSI Optoelectronics Infrared Photodiode, 65° Angle of Half Sensitivity, Through Hole TO-52 Package APD05-8-150-T52L
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