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OSI Optoelectronics Infrared Photodiode 65° Through Hole Mount FCI-InGaAs-1000

Category Photodiode Brand OSI Optoelectronics Condition New

Specifications

Country of Origin India
Diameter 5.4mm
Brand OSI Optoelectronics
Spectral range 900nm - 1700nm
Height 3.81mm
Length 8mm
Model FCI-InGaAs-1000
Packaging Tape & Reel
Width 5mm
Mount Type Through Hole
Series FCI-InGaAS
Maximum Operating Temperature 85°C
Minimum Operating Temperature -25°C
Polarity Reverse
Dark Current 0.2nA
Standards/Approvals RoHS
Number of Pins 2
Typical Fall Time 0.6ns
Wavelength of Peak Sensitivity 1550nm
Spectrums Detected Infrared
Breakdown Voltage 30V
Minimum Wavelength Detected 900nm
Maximum Wavelength Detected 1700nm
Angle of Half Sensitivity 65 °
Large active area 1mm, 1.5mm and 3mm

Key Features

  • Detects infrared spectrum with peak sensitivity at 1550nm.
  • Operates within a temperature range of -25°C to 85°C.
  • Compact dimensions include height 3.81mm, length 8mm, width 5mm, and diameter 5.4mm.
  • Low dark current of 0.2nA ensures high signal fidelity.
  • Designed with a large active area ranging from 1mm to 3mm for enhanced detection.
  • Features a breakdown voltage of 30V and reverse polarity configuration.
  • Typical rise and fall times are 0.6ns, suitable for fast response applications.
  • RoHS compliant, ensuring environmental safety standards.

Product Description

OSI Optoelectronics FCI-InGaAs-1000 is a high-performance infrared photodiode designed for sensitive detection of infrared wavelengths spanning from 900nm to 1700nm, with a peak sensitivity at 1550nm. Its through hole mount type and robust TO-46 or TO-5 package housing with a flat window provide durability and ease of integration.

The photodiode features a large active area ranging from 1mm to 3mm, enabling enhanced responsivity and low noise, making it ideal for precise IR instrumentation, optical monitoring, power measurement, IR sensing, and medical device applications. Its low dark current of 0.2nA coupled with fast rise and fall times of 0.6ns supports accurate and rapid signal detection.

Operating reliably across a temperature range of -25°C to 85°C, the device maintains performance stability in challenging environments. With a breakdown voltage of 30V and a 65-degree half sensitivity angle, it provides optimized detection within specified angular coverage.

This photodiode is RoHS compliant and supplied in tape and reel packaging, facilitating automated manufacturing processes. Its reverse polarity configuration ensures compatibility within various circuit designs.

Detects infrared spectrum with peak sensitivity at 1550nm. Large active area of 1mm, 1.5mm, and 3mm sizes available. Low dark current of 0.2nA ensures low noise operation. Fast response with typical rise and fall times of 0.6ns.

Operating temperature range from -25°C to 85°C. Through hole mount type for reliable mechanical stability. Breakdown voltage of 30V with reverse polarity. Compliant with RoHS environmental standards. Packaged in tape and reel for automated assembly.

This OSI Optoelectronics infrared photodiode series is suitable for industrial instrumentation, laboratory equipment, optical communication, manufacturing quality control, and medical sensing devices. Explore more Photodiode and optoelectronic components at EnvMart for all your high-precision sensor requirements.

OSI Optoelectronics Infrared Photodiode 65° Through Hole Mount FCI-InGaAs-1000
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