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OSI Optoelectronics Infrared Photodiode, 65 ° Angle of Half Sensitivity, Through Hole TO-18 Package PIN-020A

Category Photodiode Brand OSI Optoelectronics Condition New

Specifications

Country of Origin Philippines
Diameter 5.33mm
Brand OSI Optoelectronics
Height 5.08mm
Length 4.64mm
Model PIN-020A
Packaging Tape & Reel
Width 5mm
Mount Type Through Hole
Series D
Maximum Operating Temperature 85°C
Package Type TO-18
Minimum Operating Temperature -25°C
Polarity Forward
Dark Current 1nA
Standards/Approvals RoHS
Number of Pins 3
Typical Rise Time 6ns
Typical Fall Time 0.6ns
Wavelength of Peak Sensitivity 970nm
Spectrums Detected Infrared
Breakdown Voltage 30V
Minimum Wavelength Detected 350nm
Maximum Wavelength Detected 1100nm
Angle of Half Sensitivity 65 °

Key Features

  • Detects infrared spectrum with peak sensitivity wavelength at 970nm.
  • Suitable for applications requiring high sensitivity and moderate response speed.
  • Compact dimensions with 4.64mm length, 5.08mm height, and 5.33mm diameter.
  • Features low dark current of 1nA and breakdown voltage of 30V for stable performance.
  • Operates reliably between -25°C and 85°C operating temperature range.
  • Supplied in tape & reel packaging with 3-pin through hole mount type.
  • Exhibits ultra low noise and high shunt resistance for precise measurements.
  • Complies with RoHS standards and is manufactured in Philippines.

Product Description

OSI Optoelectronics PIN-020A infrared photodiode is designed with a 65 ° angle of half sensitivity to efficiently detect infrared wavelengths, making it ideal for industrial, laboratory, and electronic applications requiring precise infrared detection. Packaged in a through hole TO-18 metal can, it ensures easy mounting on circuit boards and robust mechanical stability.

This photodiode detects infrared with a peak sensitivity at 970nm and covers a wide detection range from 350nm to 1100nm. It offers high shunt resistance and ultra-low noise characteristics, resulting in accurate and stable readings even in low light environments.

The device operates within a temperature range of -25°C to 85°C and features a dark current as low as 1nA and a breakdown voltage of 30V, emphasizing its reliability under varying operating conditions. Typical rise and fall times are 6ns and 0.6ns, respectively, suitable for moderate speed response applications.

Physically, the photodiode measures 4.64mm in length, 5mm in width, 5.08mm in height, and 5.33mm in diameter, with a window diameter of approximately 0.155 inch, offering a compact footprint for integration.

The product complies with RoHS directives and is produced in the Philippines. It is supplied in tape & reel packaging, optimized for automated assembly. Detects infrared spectrum with peak sensitivity wavelength at 970nm.

Suitable for applications requiring high sensitivity and moderate response speed. Compact dimensions with 4.64mm length, 5.08mm height, and 5.33mm diameter. Features low dark current of 1nA and breakdown voltage of 30V for stable performance.

Operates reliably between -25°C and 85°C operating temperature range. Supplied in tape & reel packaging with 3-pin through hole mount type. Exhibits ultra low noise and high shunt resistance for precise measurements. Complies with RoHS standards and is manufactured in Philippines.

This OSI Optoelectronics photodiode is fit for applications in electronic components, power & connectors, optoelectronics systems, and sensor technologies. It supports power management, measurement, and control systems in industrial, laboratory, and commercial environments.

Explore more Photodiodes and optoelectronic components with EnvMart's comprehensive catalog for your application needs.

OSI Optoelectronics Infrared Photodiode, 65 ° Angle of Half Sensitivity, Through Hole TO-18 Package PIN-020A
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