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| Country of Origin | India |
|---|---|
| Diameter | 6.1mm |
| Brand | onsemi |
| Height | 8.77mm |
| Length | 4.95mm |
| Wavelength | 880nm |
| Model | QSD2030F |
| Packaging | Tape & Reel |
| Width | 6mm |
| Mount Type | Through Hole |
| Series | QSD |
| Maximum Operating Temperature | 85°C |
| Package Type | T-1 3/4 |
| Minimum Operating Temperature | -25°C |
| Polarity | Forward |
| Dark Current | 0.5nA |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 5ns |
| Wavelength of Peak Sensitivity | 880nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 50V |
| Minimum Wavelength Detected | 700nm |
| Maximum Wavelength Detected | 1100nm |
| Angle of Half Sensitivity | 65 ° |
| Sensitive area dimensions | 1.245 x 1.245 mm |
| Wide reception angle | 40° |
| Vishay, TEFD4300F IR Si PIN Photodiode, ±20 °, Through Hole 3mm packageBrand | Vishay |
The onsemi QSD2030F is a high-quality infrared photodiode designed for efficient detection of infrared light with a peak sensitivity wavelength of 880nm. Packaged in a standard 5mm (T-1 3/4) plastic silicon PIN through-hole package, this photodiode features a black epoxy encapsulation with an integrated daylight filter to minimize interference from ambient visible light, making it ideal for precise IR sensing applications.
This device has a wide reception angle of 40° and an angle of half sensitivity at 65°, providing excellent signal capture from various directions. Its fast typical rise and fall times of 5 nanoseconds enable rapid response to light changes, suitable for high-speed electronic circuits.
The QSD2030F photodiode supports a broad operating wavelength range from 700nm to 1100nm, ensuring versatility in detecting various IR signals. It is built for through-hole mounting with two pins and complies with RoHS standards, emphasizing environmental compliance and safety.
Operating reliably over temperatures from -25°C to 85°C, and featuring a breakdown voltage of 50V with low dark current of 0.5nA, this photodiode combines robustness with precise performance. Its sensitive area measures 1.245 x 1.245 mm, offering focused detection capability.
Black epoxy plastic silicon PIN photodiode design. Daylight filter reduces ambient light interference. Fast response with 5ns rise and fall times. Wide operating wavelength from 700nm to 1100nm. Standard 5mm (T-1 3/4) through-hole package.
RoHS compliant for environmental safety. Operating temperature range of -25°C to 85°C. Breakdown voltage up to 50V ensures electrical stability. Low dark current of 0.5nA enhances signal accuracy. Suitable for industrial, laboratory, and electronic sensor applications.
This infrared photodiode is widely applicable in industrial electronics, laboratory instruments, telecommunications equipment, and electronic optoelectronic devices where reliable IR detection is required. Its high sensitivity and durable packaging make it a preferred component for precision signal sensing and light detection circuits.
Explore additional infrared Photodiode options and electronic components in the Electronics & Electricals category on EnvMart for comprehensive procurement solutions.
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