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onsemi Infrared Photodiode 65° Through Hole T-1 3/4, 880nm Wavelength Peak Sensitivity QSD2030F

Category Photodiode Brand onsemi Condition New

Specifications

Country of Origin India
Diameter 6.1mm
Brand onsemi
Height 8.77mm
Length 4.95mm
Wavelength 880nm
Model QSD2030F
Packaging Tape & Reel
Width 6mm
Mount Type Through Hole
Series QSD
Maximum Operating Temperature 85°C
Package Type T-1 3/4
Minimum Operating Temperature -25°C
Polarity Forward
Dark Current 0.5nA
Standards/Approvals RoHS
Number of Pins 2
Typical Fall Time 5ns
Wavelength of Peak Sensitivity 880nm
Spectrums Detected Infrared
Breakdown Voltage 50V
Minimum Wavelength Detected 700nm
Maximum Wavelength Detected 1100nm
Angle of Half Sensitivity 65 °
Sensitive area dimensions 1.245 x 1.245 mm
Wide reception angle 40°
Vishay, TEFD4300F IR Si PIN Photodiode, ±20 °, Through Hole 3mm packageBrand Vishay

Key Features

  • Equipped with a black epoxy plastic silicon PIN photodiode structure.
  • Peak sensitivity wavelength at 880nm ensures effective infrared detection.
  • Features a daylight filter to block ambient visible light interference.
  • Operates over a wavelength range of 700nm to 1100nm with high sensitivity.
  • Designed for through-hole mounting with 2 pins for straightforward PCB integration.
  • Typical rise and fall times of 5ns provide fast response for signal detection.
  • Wide operating temperature range from -25°C to 85°C for diverse environments.
  • Standard 5mm (T-1 3/4) package dimension facilitates compatibility with various designs.

Product Description

The onsemi QSD2030F is a high-quality infrared photodiode designed for efficient detection of infrared light with a peak sensitivity wavelength of 880nm. Packaged in a standard 5mm (T-1 3/4) plastic silicon PIN through-hole package, this photodiode features a black epoxy encapsulation with an integrated daylight filter to minimize interference from ambient visible light, making it ideal for precise IR sensing applications.

This device has a wide reception angle of 40° and an angle of half sensitivity at 65°, providing excellent signal capture from various directions. Its fast typical rise and fall times of 5 nanoseconds enable rapid response to light changes, suitable for high-speed electronic circuits.

The QSD2030F photodiode supports a broad operating wavelength range from 700nm to 1100nm, ensuring versatility in detecting various IR signals. It is built for through-hole mounting with two pins and complies with RoHS standards, emphasizing environmental compliance and safety.

Operating reliably over temperatures from -25°C to 85°C, and featuring a breakdown voltage of 50V with low dark current of 0.5nA, this photodiode combines robustness with precise performance. Its sensitive area measures 1.245 x 1.245 mm, offering focused detection capability.

Black epoxy plastic silicon PIN photodiode design. Daylight filter reduces ambient light interference. Fast response with 5ns rise and fall times. Wide operating wavelength from 700nm to 1100nm. Standard 5mm (T-1 3/4) through-hole package.

RoHS compliant for environmental safety. Operating temperature range of -25°C to 85°C. Breakdown voltage up to 50V ensures electrical stability. Low dark current of 0.5nA enhances signal accuracy. Suitable for industrial, laboratory, and electronic sensor applications.

This infrared photodiode is widely applicable in industrial electronics, laboratory instruments, telecommunications equipment, and electronic optoelectronic devices where reliable IR detection is required. Its high sensitivity and durable packaging make it a preferred component for precision signal sensing and light detection circuits.

Explore additional infrared Photodiode options and electronic components in the Electronics & Electricals category on EnvMart for comprehensive procurement solutions.

onsemi Infrared Photodiode 65° Through Hole T-1 3/4, 880nm Wavelength Peak Sensitivity QSD2030F
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Frequently Asked Questions

The peak sensitivity wavelength of this photodiode is 880nm, which ensures effective infrared detection.

This model operates reliably over a temperature range from -25°C to 85°C, making it suitable for diverse environments.

The photodiode has a diameter of 6.1mm, a height of 8.77mm, a length of 4.95mm, and a width of 6mm.

It is designed for through-hole mounting with 2 pins, facilitating straightforward PCB integration.

The typical rise and fall times for this photodiode are both 5 nanoseconds, allowing for fast response to light changes.

The breakdown voltage for this photodiode is 50V, ensuring electrical stability during operation.

It has a low dark current rating of 0.5nA, which enhances signal accuracy during operation.

This model can detect wavelengths ranging from 700nm to 1100nm, providing versatility in infrared signal detection.

The sensitive area of this photodiode measures 1.245 x 1.245 mm, allowing for focused detection capability.

Yes, the QSD2030F complies with RoHS standards, emphasizing its environmental safety and compliance.

It features a wide reception angle of 40° and an angle of half sensitivity at 65°, which enhances its signal capture capabilities.

The photodiode is packaged in a standard T-1 3/4 format and is available in tape and reel packaging.

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