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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | IRFL9110TRPBF |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | IRFL |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 690mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.1W |
| Typical Gate Charge Qg @ Vgs | 8.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -5.5V |
Vishay IRFL9110TRPBF is a P-Channel MOSFET semiconductor designed for discrete electronic circuits requiring efficient switching and low power dissipation. It features a maximum continuous drain current rating of 690 mA and a maximum drain-source voltage of 100 V, making it suitable for various power management applications.
This surface mount device comes in a 4-pin SOT-223 package, facilitating easy PCB integration with its compact footprint of 6.7 mm length, 3.7 mm width, and 1.8 mm height. Its low drain-source resistance of 1.2 Ω minimizes conduction losses and enhances energy efficiency in electronic assemblies.
Operating temperature tolerance ranging from -55 °C up to 150 °C allows this MOSFET to function reliably under harsh industrial and automotive environments. The typical gate charge of 8.7 nC at Vgs enhances switching speed, vital for high-frequency applications.
Additional specifications include a maximum power dissipation of 3.1 W and a maximum gate-source voltage of -20 to +20 V, providing design flexibility for various electronic control circuits.
Type P channel semiconductor designed for efficient switching. Maximum continuous drain current of 690 mA ensures robust performance. Supports maximum drain-source voltage of 100 V with enhancement mode. Low on-resistance of 1.2 Ω reduces power losses during operation.
Maximum power dissipation rated at 3.1 W for thermal reliability. Wide operating temperature range from -55 °C to 150 °C for diverse environments. Compact dimensions of 6.7 mm length, 3.7 mm width, and 1.8 mm height support space-saving designs.
Typical gate charge of 8.7 nC at gate-source voltage ensures rapid switching. 4-pin SOT-223 package suitable for surface mounting on PCBs. Maximum gate-source voltage ranges from -20 V to +20 V, supporting voltage tolerance.
This Vishay MOSFET is ideal for electronic, industrial, automotive, and power management applications requiring reliable semiconductor performance with compact packaging and strong electrical characteristics. Its surface mount technology package supports modern electronics manufacturing and assembly processes.
Explore the comprehensive range of semiconductor products and MOSFET components on EnvMart to find solutions tailored to your industrial and manufacturing needs.
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