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Vishay TrenchFET N-Channel MOSFET, 40 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SO-8 SIRA06DP-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SIRA06DP-T1-GE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 3.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 62.5W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | -16, +20V |
| Forward Voltage Vf | 0.73V |
Key Features
- Delivers a maximum continuous drain current of 40 A for demanding power applications.
- Supports a maximum drain-source voltage of 30 V suitable for low voltage circuits.
- Surface mount SO-8 package with 8 pins ensures compact design integration.
- Features a low maximum drain-source resistance of 3.5 mΩ to reduce conduction losses.
- Operates with an enhancement mode channel type for efficient switching performance.
- Has a maximum power dissipation rating of 62.5 W for thermal reliability.
- Wide operating temperature range from -55°C to 150°C supports industrial applications.
- Typical gate charge of 51 nC at Vgs helps optimize switching speed.
Product Description
Vishay SIRA06DP-T1-GE3 is an N-Channel MOSFET from the TrenchFET Gen IV series specifically designed for surface-mount applications on printed circuit boards. Featuring a maximum continuous drain current of 40 A and a drain-source voltage rating of 30 V, this device is well suited for power conversion, switching regulators, and load switching applications in industrial, automotive, and consumer electronic circuits.
Its SO-8 package with 8 pins allows for compact integration with excellent thermal and electrical performance. The TrenchFET design offers low Rds(on) resistance of 3.5 milliohms, minimizing conduction losses and improving efficiency in high current workloads.
The device supports an enhancement mode channel type and a typical gate charge of 51 nC at 10 V gate drive, enabling fast switching speeds and reducing switching losses. It tolerates gate-source voltages between -16 V and +20 V to enhance operational reliability.
Operating temperature range from -55°C to 150°C makes it suitable for harsh environments including automotive and industrial applications. The maximum power dissipation of 62.5 W ensures thermal resilience under heavy load conditions.
The SIRA06DP-T1-GE3 dimensions are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height, facilitating compact PCB layouts. This MOSFET is RoHS compliant and designed for modern electronics manufacturing.
Delivers a maximum continuous drain current of 40 A for demanding power applications. Supports a maximum drain-source voltage of 30 V suitable for low voltage circuits. Surface mount SO-8 package with 8 pins ensures compact design integration.
Features a low maximum drain-source resistance of 3.5 mΩ to reduce conduction losses. Operates with an enhancement mode channel type for efficient switching performance. Has a maximum power dissipation rating of 62.5 W for thermal reliability.
Wide operating temperature range from -55°C to 150°C supports industrial applications. Typical gate charge of 51 nC at Vgs helps optimize switching speed. Maximum gate-source voltage tolerance of -16 V to +20 V protects the MOSFET from gate damage.
Compact dimensions: length 6.25 mm, width 5.26 mm, and height 1.12 mm.
This Vishay MOSFET is ideal for power management in industrial automation, consumer electronics, automotive circuits, and renewable energy systems. EnvMart offers this TrenchFET MOSFET as part of our extensive semiconductor portfolio for high reliability and performance applications.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 40 A, making it suitable for demanding power applications.
This model supports a maximum drain-source voltage of 30 V, which is appropriate for low voltage circuits.
It comes in a surface mount SO-8 package with 8 pins, allowing for compact design integration.
The maximum power dissipation rating for this MOSFET is 62.5 W, ensuring thermal reliability under heavy load conditions.
The typical gate charge at Vgs is 51 nC, which helps optimize switching speed.
This model tolerates gate-source voltages between -16 V and +20 V, enhancing operational reliability.
The dimensions are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height, facilitating compact PCB layouts.
It operates within a wide temperature range from -55°C to 150°C, making it suitable for industrial applications.
This MOSFET operates with an enhancement mode channel type, which is efficient for switching performance.
The maximum drain-source resistance is 3.5 mΩ, which helps reduce conduction losses.
This MOSFET is suitable for power conversion, switching regulators, and load switching in industrial, automotive, and consumer electronic circuits.
Yes, this MOSFET is RoHS compliant, aligning with modern electronics manufacturing standards.
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