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Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC SI4554DY-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | SI4554DY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 34mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.2W |
| Typical Gate Charge Qg @ Vgs | 13.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- This component supports a maximum continuous drain current of 8 A.
- It has a maximum drain-source voltage of 40 V to withstand moderate power applications.
- The MOSFET features an 8-pin SOIC package type for surface mount technology compatibility.
- Typical gate charge at gate-source voltage is 13.3 nC, ensuring fast switching.
- The device operates reliably between -55°C to +150°C operating temperature.
- Max drain-source resistance is 34 mΩ, offering low conduction losses.
- It includes isolated transistor configuration for enhanced electrical isolation.
- Suitable for use in industrial and electronic applications requiring precise power control.
Product Description
Vishay SI4554DY-T1-GE3 is a dual isolated trench MOSFET integrating both P-channel and N-channel types in a single device. Designed with trench FET technology, this MOSFET offers low resistance and high efficiency for switching applications in electronic circuits.
The device supports a maximum continuous drain current of 8 A and a drain-source voltage up to 40 V, making it suitable for power management and amplification tasks across diverse industrial, automotive, and consumer electronics applications. It is packaged in an 8-pin SOIC surface mount package, facilitating easy integration into compact PCB layouts.
This MOSFET operates in enhancement mode with a typical gate charge of 13.3 nC at gate-source voltage ensuring rapid switching and minimized power losses. Its operating temperature range from -55°C to +150°C ensures stable performance in extreme conditions. The low gate-source resistance of 34 mΩ further enhances power efficiency.
The isolated transistor configuration offers enhanced safety and circuit isolation, critical in complex industrial equipment or control systems. The compact dimensions (5 mm length, 4 mm width, 1.5 mm height) allow installation in space-constrained designs.
Applications span from power supplies, motor controllers, and automotive electronics to switching regulators and digital load management. This Vishay MOSFET is engineered for reliability, efficiency, and compactness in modern electronic device manufacturing.
This component supports a maximum continuous drain current of 8 A. It has a maximum drain-source voltage of 40 V to withstand moderate power applications. The MOSFET features an 8-pin SOIC package type for surface mount technology compatibility.
Typical gate charge at gate-source voltage is 13.3 nC, ensuring fast switching. The device operates reliably between -55°C to +150°C operating temperature. Max drain-source resistance is 34 mΩ, offering low conduction losses.
It includes isolated transistor configuration for enhanced electrical isolation. Dimensions are compact with length 5 mm, width 4 mm, and height 1.5 mm. Suitable for use in industrial and electronic applications requiring precise power control.
Explore more Vishay MOSFETs and related semiconductor devices in our Electronics & Electricals category at EnvMart for your professional application needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 A.
It can withstand a maximum drain-source voltage of 40 V.
This MOSFET features an 8-pin SOIC package type, suitable for surface mount technology.
The typical gate charge at gate-source voltage is 13.3 nC, which ensures fast switching.
It operates reliably between -55°C to +150°C.
The maximum drain-source resistance is 34 mΩ, contributing to low conduction losses.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
This model integrates both P-channel and N-channel types in a single device.
The maximum power dissipation is 3.2 W.
The maximum gate-source voltage is -20 V to +20 V.
It is suitable for applications including power supplies, motor controllers, and automotive electronics.
The transistor configuration is isolated, providing enhanced electrical isolation.
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