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Vishay P-Channel MOSFET, 6 A, 12 V Enhancement Mode, 3-Pin SOT-23 SI2333DDS-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2333DDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2333DDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 19Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
| P-Channel MOSFET Transistor, 3 A, 12 V, 3-Pin SOT-23 Vishay SI2315BDS-T1-E3Brand | Vishay |
Key Features
- Maximum continuous drain current is 6 A ensuring efficient current handling.
- Maximum drain-source voltage rating is 12 V suitable for low-voltage applications.
- Low maximum drain-source resistance of 19 ohms minimizes power loss.
- Typical gate charge of 23 nC reduces switching losses for enhanced performance.
- Wide operating temperature range from -55°C to 150°C for industrial reliability.
- Compact dimensions with length 3.04 mm, width 1.4 mm, and height 1.02 mm in SOT-23 package.
- Forward voltage of -1.2 V and gate voltage tolerance of -8 V to +8 V.
- Enhancement mode channel type ensures normally off operation.
Product Description
Vishay SI2333DDS-T1-GE3 is a P-Channel MOSFET transistor designed for electronic and power switching applications. It features a maximum continuous drain current of 6 A and withstands up to 12 V drain-source voltage. The device is housed in a compact 3-pin SOT-23 package with surface mount mounting, making it suitable for compact circuit board layouts in industrial and consumer electronics.
This MOSFET operates in enhancement mode and offers a low maximum drain-source resistance of 19 ohms, which improves energy efficiency by minimizing conduction losses. The typical gate charge of 23 nC contributes to low switching losses, making it appropriate for fast switching applications.
The operating temperature range extends from -55°C to 150°C ensuring reliable operation in harsh environments. The device also features a forward voltage of -1.2 V and is rated for a gate-source voltage of -8 V to +8 V, providing robust gate voltage handling capability.
With dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height, the SI2333DDS-T1-GE3 is easily integrated into compact PCB designs, fulfilling the needs of industrial, consumer electronics, and power management systems. It is a new product without specific automotive compliance or standardized certifications.
Maximum continuous drain current: 6 A for high current applications. Drain-source voltage rating: 12 V tailored for low-voltage power switching. Low drain-source resistance of 19 ohms reduces conduction losses. Gate charge of 23 nC facilitates efficient switching.
Wide operating temperature range for durability in diverse environments. Compact SOT-23 package suitable for surface mount technology. Forward voltage of -1.2 V ensures proper device characteristics. Gate voltage rating from -8 V to +8 V for excellent control margins.
Enhancement mode P-Channel transistor for normally off operation.
Ideal for industrial electronics, power management circuits, and control systems, this MOSFET presents a reliable choice for efficient power switching. Explore the full range of MOSFETs and semiconductor solutions on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 A, making it suitable for high current applications.
This MOSFET has a maximum drain-source voltage rating of 12 V, which is tailored for low-voltage power switching applications.
The maximum drain-source resistance is 19 ohms, which helps to reduce conduction losses and improve energy efficiency.
The typical gate charge is 23 nC, which contributes to low switching losses, enhancing performance in fast switching applications.
It operates within a wide temperature range of -55°C to 150°C, ensuring reliability in harsh environments.
The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height, making it compact for PCB designs.
This model supports surface mount technology, suitable for compact circuit board layouts.
The maximum gate-source voltage rating is -8 V to +8 V, providing robust control margins for operation.
The forward voltage is -1.2 V, which is important for ensuring proper device characteristics.
It uses an enhancement mode channel type, which means it operates in a normally off condition.
The maximum power dissipation is 1.7 W, which is relevant for thermal management in circuit designs.
The SI2333DDS-T1-GE3 is manufactured in India.
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