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Texas Instruments NexFET N-Channel Power MOSFET, 100 A, 60 V Enhancement Mode, 8-Pin SON Package CSD18533Q5A
Specifications
| Country of Origin | India |
|---|---|
| Brand | Texas Instruments |
| Height | 1.1mm |
| Length | 5.8mm |
| Model | CSD18533Q5A |
| Width | 5mm |
| Mount Type | Surface |
| Series | NexFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 8.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.2W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
Key Features
- Features a low 8.5 milliohm maximum drain-source resistance for efficient power switching.
- Enhancement mode MOSFET with NexFET technology for improved performance.
- Compact surface-mount SON package measuring 5.8mm length by 5mm width and 1.1mm height.
- Maximum power dissipation of 3.2 watts allows for reliable operation in demanding applications.
- Operating temperature range from -55°C to 150°C supports harsh environments.
- Equipped with typical gate charge of 14 nC at specified gate voltage, optimizing switching speed.
- Gate threshold voltage supports a maximum gate-source voltage of -20 V to +20 V.
Product Description
Texas Instruments CSD18533Q5A NexFET N-Channel Power MOSFET is designed for high efficiency and robust performance in power switching applications. It supports a maximum continuous drain current of 100 amperes and a drain-source voltage of 60 volts, providing excellent current carrying capacity in a compact SON surface-mount package.
The device operates in enhancement mode and utilizes NexFET technology to minimize conduction losses with a low maximum drain-source resistance of 8.5 milliohms. This characteristic makes the MOSFET suitable for use in automotive, industrial, and consumer electronics sectors requiring efficient power management.
Measuring 5.8 mm in length, 5 mm in width, and 1.1 mm in height, the 8-pin SON package enables streamlined PCB layouts and improved thermal handling. The MOSFET features a maximum power dissipation rating of 3.2 watts and a wide operating temperature range from -55°C to 150°C, ensuring reliable operation under harsh environmental conditions.
Additional electrical characteristics include a typical gate charge of 14 nC at Vgs, supporting fast switching speeds and efficiency. The maximum gate-source voltage rating of -20 V to +20 V provides a broad operating margin for control circuits.
This MOSFET is ideal for application in DC-DC converters, motor control, power management modules, and other semiconductor discrete component solutions requiring robust, high-current switching performance.
Features a low 8.5 milliohm maximum drain-source resistance for efficient power switching. Enhancement mode NexFET technology for superior conduction and switching characteristics. Compact surface-mount 8-pin SON package for space-saving PCB designs.
Maximum drain current of 100 A and drain-source voltage of 60 V. Wide operating temperature range from -55°C to 150°C for durability. Maximum power dissipation rating of 3.2 W suitable for medium power applications. Typical gate charge of 14 nC ensures fast switching response.
Explore a wide range of Semiconductors and electronic components from Texas Instruments and other top brands on EnvMart for industrial, laboratory, and manufacturing applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This unit has a maximum drain-source voltage rating of 60 V.
The maximum power dissipation rating is 3.2 W.
The typical gate charge is 14 nC at the specified gate voltage.
The SON package measures 5.8 mm in length, 5 mm in width, and 1.1 mm in height.
It operates within a temperature range from -55°C to 150°C.
The maximum gate-source voltage supported is -20 V to +20 V.
The maximum drain-source resistance is 8.5 milliohms.
This model uses surface mounting.
This MOSFET belongs to the NexFET series.
The channel mode of this model is enhancement mode.
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