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onsemi Small Signal NPN Transistor 150 mA 50 V 3-Pin TO-92 Through Hole KSC945YBU

Category Semiconductor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.62mm
Length 5.2mm
Model KSC945YBU
Width 19.05mm
Mount Type Through Hole
Series KSC945
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 150mA
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • This transistor supports a maximum DC collector current of 150 mA.
  • It features a maximum collector emitter voltage (Vceo) of 50 V for reliable switching.
  • The package type is TO-92, suitable for through-hole mounting.
  • The transistor configuration is single channel with NPN polarity.
  • It has a minimum DC current gain (hFE) of 40 for moderate amplification.
  • Maximum power dissipation rating is 250 mW, ideal for low power circuits.
  • The maximum transition frequency (ft) is 1 MHz, ensuring satisfactory high frequency performance.
  • This device operates at a maximum temperature of 150°C for durability in various environments.

Product Description

onsemi KSC945YBU is a small signal NPN bipolar junction transistor designed for use in low power switching and amplification applications within electronic circuits. This transistor supports a maximum DC collector current of 150 mA and a maximum collector emitter voltage of 50 V, making it suitable for a range of signal processing uses.

It comes in a compact TO-92 package with 3 pins, optimized for through hole mounting, which facilitates easy integration onto PCBs. The device features a minimum DC current gain (hFE) of 40 and can dissipate up to 250 milliwatts of power, balancing performance and thermal considerations.

Its maximum transition frequency of 1 MHz supports moderate frequency applications.

With a maximum operating temperature of 150°C, this transistor is capable of sustaining performance under elevated temperatures typically encountered in industrial and commercial electronics.

Physical dimensions are 20.62 mm in height, 19.05 mm in width, and 5.2 mm in length, supporting compact design requirements.

This transistor is widely applicable in industrial electronics, consumer devices, automation systems, and educational electronics projects where discrete bipolar transistors are required.

This transistor supports a maximum DC collector current of 150 mA. It features a maximum collector emitter voltage (Vceo) of 50 V for reliable switching. The package type is TO-92, suitable for through-hole mounting. The transistor configuration is single channel with NPN polarity.

It has a minimum DC current gain (hFE) of 40 for moderate amplification. Maximum power dissipation rating is 250 mW, ideal for low power circuits. The maximum transition frequency (ft) is 1 MHz, ensuring satisfactory high frequency performance.

This device operates at a maximum temperature of 150°C for durability in various environments. Pin count is 3, standard for this transistor type. Physical dimensions include height 20.62 mm, width 19.05 mm, and length 5.2 mm.

Explore more products within Semiconductor discrete components and enhance your electronic designs with reliable components from onsemi at EnvMart.

onsemi Small Signal NPN Transistor 150 mA 50 V 3-Pin TO-92 Through Hole KSC945YBU
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Frequently Asked Questions

The maximum DC collector current for this transistor is 150 mA.

The maximum collector emitter voltage (Vceo) is 50 V, which allows for reliable switching applications.

This transistor comes in a TO-92 package type and is designed for through-hole mounting.

The minimum DC current gain (hFE) for this model is 40, suitable for moderate amplification tasks.

The maximum power dissipation rating is 250 mW, making it suitable for low power circuits.

The maximum transition frequency (ft) is 1 MHz, which supports moderate frequency applications.

The maximum operating temperature for this model is 150°C, allowing for use in various environments.

The physical dimensions of this transistor are 20.62 mm in height, 19.05 mm in width, and 5.2 mm in length.

This model features a single channel configuration with NPN polarity.

The maximum emitter base voltage (VEBO) is 5 V.

The maximum collector base voltage (VCBO) is 60 V.

This transistor is widely applicable in industrial electronics, consumer devices, automation systems, and educational electronics projects.

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