Infineon CoolMOS N-Channel MOSFET, 13 A, 800 V Enhancement Mode, 3-Pin TO-220 IPP80R360P7XKSA1

Infineon IPP80R360P7XKSA1 CoolMOS N-Channel MOSFET is engineered primarily for flyback power supply applications, including adapters, chargers, LED drivers, audio SMPS, auxiliary power, and industrial power solutions. This enhancement mode MOSFET supports a continuous drain current of 13 A and a maximum drain-source voltage of 800 V, suitable for high-voltage switching environments.

The device delivers significant thermal and efficiency improvements with up to 0.6% higher efficiency and 2°C to 8°C lower operation temperatures compared to its predecessors and competitor parts, contributing to increased power density and reliability in your designs.

Designed in a 3-pin TO-220 surface mount package, it offers an optimal balance between thermal management and PCB space-saving, making it ideal for industrial and commercial electronic equipment. Its low on-resistance (360 mΩ) reduces conduction losses, helping to lower energy consumption and improve overall system efficiency.

This MOSFET’s robust design includes a typical gate charge of 30 nC and a maximum gate-source voltage of 20 V, facilitating easy gate drive and precise control in switching applications. The forward voltage drop of 900 mV further limits power losses during conduction.

With an operating temperature range spanning from -55°C to 150°C, this semiconductor device is highly reliable in diverse environmental conditions, making it suitable for automotive and industrial sectors requiring durable MOSFET solutions.

Offers up to 0.6% efficiency gain compared to predecessor models. Operates at a maximum power dissipation of 84 W for reliable performance. Features a low RDS(on) of 360 milliohms for reduced conduction losses. Supports a wide operating temperature range from -55°C to 150°C.

Equipped with a 3-pin TO-220 surface mount package for easy integration. Maximum gate-source voltage rated at 20 V for enhanced gate control. Low forward voltage of 900 mV ensures minimal voltage drop during operation. Typical gate charge of 30 nC enables efficient switching characteristics.

This Infineon CoolMOS MOSFET is ideal for applications in industrial power supplies, construction of LED drivers, audio SMPS, and auxiliary power units. It supports engineers and designers aiming at higher power density designs, improved energy efficiency, and enhanced operational reliability.

Explore EnvMart’s extensive range of high-quality MOSFETs and power semiconductors to optimize your industrial and commercial electronic solutions.