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Vishay SQ Rugged Type P-Channel MOSFET 11 A 60 V Enhancement Mode 3-Pin TO-252 SQD19P06-60L_GE3
Specifications
| Country of Origin | Taiwan |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | SQD19P06-60L_GE3 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 46W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.5V |
Key Features
- Designed for surface mount applications with a TO-252 package.
- Maximum continuous drain current of 11 amperes for reliable power handling.
- Capable of withstanding maximum drain-source voltage of 60 volts.
- Features enhancement mode channel operation with low gate charge for efficient switching.
- Maximum power dissipation rated at 46 W ensuring robust thermal performance.
- Wide operating temperature range from -55°C to 175°C supports harsh environments.
- Complies with automotive standard AEC-Q101 for high reliability in automotive applications.
- Compact dimensions with length 6.73 mm, width 6.22 mm, and height 2.38 mm.
Product Description
Vishay SQD19P06-60L_GE3 is a P-Channel MOSFET transistor from the SQ Rugged series designed for high-performance power switching in industrial, automotive, and electronic applications. It comes in a compact TO-252 surface-mount package with a 3-pin configuration.
This MOSFET supports a maximum continuous drain current of 11 amperes and can handle drain-source voltages up to 60 volts, making it suitable for medium-power applications requiring robust and reliable switching devices. The enhancement mode channel ensures effective control with a maximum gate charge of 27 nanocoulombs, enabling efficient switching with low gate drive power.
The device is rated for maximum power dissipation of 46 watts and operates safely across a broad temperature range from -55°C up to 175°C, suitable for rigorous industrial and automotive environments. It meets the automotive AEC-Q101 standard, highlighting its suitability for automotive electronics requiring high reliability under demanding conditions.
Its compact physical dimensions - 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height - allow easy integration into circuit boards where space constraints are critical. With low maximum drain-source resistance (Rds) of 125 milliohms, it offers minimal conduction losses.
Designed for surface mount applications with a TO-252 package. Maximum continuous drain current of 11 amperes for reliable power handling. Capable of withstanding maximum drain-source voltage of 60 volts. Enhancement mode channel for efficient operation.
Maximum power dissipation rated at 46 watts. Operating temperature range from -55°C to 175°C. Automotive grade compliant with AEC-Q101 standard. Compact package dimensions for easy PCB integration. 3-pin device configuration.
Country of origin is Taiwan, Province Of China.
This Vishay MOSFET is suitable for applications in industrial power electronics, automotive circuits, power management systems, and general semiconductor switching tasks. It supports robust performance in challenging environments requiring high current and voltage ratings combined with automotive reliability.
Explore the Electronics & Electricals category for additional semiconductor and discrete components offered by Vishay and other leading manufacturers on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 amperes, allowing for reliable power handling in various applications.
It can withstand a maximum drain-source voltage of 60 volts, making it suitable for medium-power applications.
The maximum power dissipation rating is 46 watts, ensuring robust thermal performance during operation.
This unit operates within a wide temperature range from -55°C to 175°C, suitable for harsh environments.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
It features an enhancement mode channel, which allows for efficient control and low gate charge.
The typical gate charge at Vgs is 27 nanocoulombs, facilitating efficient switching with low gate drive power.
Yes, it complies with the automotive standard AEC-Q101, indicating high reliability for automotive applications.
The maximum gate-source voltage is -20 to +20 volts, which is essential for its operation in various circuits.
The maximum drain-source resistance is 125 milliohms, providing minimal conduction losses during operation.
This device has a pin count of 3, suitable for its TO-252 surface-mount configuration.
The country of origin for this MOSFET is Taiwan, Province Of China.
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