World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

DiodesZetex N-Channel MOSFET 2.2 A, 100 V Enhancement, 6-Pin UDFN Package DMN10H220LFDF-7

Free Delivery in India | Lowest Global Shipping Charges

DiodesZetex N-Channel MOSFET 2.2 A, 100 V Enhancement, 6-Pin UDFN Package DMN10H220LFDF-7

Name: DiodesZetex N-Channel MOSFET 2.2 A, 100 V Enhancement, 6-Pin UDFN Package DMN10H220LFDF-7
Brand: DiodesZetex
SKU: 286360
Price: 0.13 USD
Availability: InStock



Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	630μm
Length	2.05mm
Model	DMN10H220LFDF-7
Width	2.05mm
Mount Type	Surface
Series	DMN10H220LFDF
Maximum Operating Temperature	150°C
Package Type	UDFN
Minimum Operating Temperature	-55°C
Pin Count	6
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	2.2A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	225mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.1W
Typical Gate Charge Qg @ Vgs	6.7nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.3V

Key Features

Designed for high efficiency power management applications.
Low on-state resistance for reduced power loss.
Fast switching speed with low input capacitance.
Supports a maximum gate-source voltage of 20 V.
Operating temperature range from -55°C to 150°C.
Surface mount device with 6-pin configuration.
Typical gate charge of 6.7 nC at Vgs.
Maximum power dissipation of 1.1 W.

Product Description

The DiodesZetex DMN10H220LFDF-7 is a N-Channel MOSFET designed to deliver efficient power management in compact electronics applications. Featuring a 2.2 A continuous drain current and 100 V maximum drain-source voltage, this device operates within a wide temperature range from -55°C to 150°C, ensuring reliability in challenging environments.

Housed in a 6-pin UDFN surface mount package with precise dimensions of 2.05 mm by 2.05 mm and a height of 630 μm, the MOSFET is suitable for applications requiring space-saving designs. Its low on-resistance and fast switching capability minimize power loss and enhance system performance.

This enhancement-mode MOSFET supports a maximum gate-source voltage of 20 V and has a typical gate charge of 6.7 nC, facilitating rapid switching in power circuits. The maximum power dissipation rating is 1.1 W, suitable for low to moderate power applications.

Compliant with the automotive industry standard AEC-Q101, the device meets stringent quality and reliability requirements for automotive electronics. Its low forward voltage of 1.3 V and surface mount design provide ease of integration in electronic assemblies.

Ideal use cases include power management modules, battery management systems, DC-DC converters, and other compact electronic power devices requiring efficient N-Channel MOSFET performance.

Designed for high efficiency power management applications. Low on-state resistance for reduced power loss. Fast switching speed with low input capacitance. Supports a maximum gate-source voltage of 20 V. Operating temperature range from -55°C to 150°C.

Compact dimensions: 2.05 mm length and width, 630 μm height. Surface mount device with 6-pin configuration. Typical gate charge of 6.7 nC at Vgs. Maximum power dissipation of 1.1 W. Automotive qualified to AEC-Q101 standard.

Browse more from DiodesZetex and other leading brands in the Electronics & Electricals category at EnvMart for your semiconductor needs.