Vishay N-Channel MOSFET PowerPAK (8x8L) 460 A 40 V Enhancement Mode SQJQ142E-T1_GE3

Vishay SQJQ142E-T1_GE3 is a high-performance N-Channel MOSFET designed for power electronics applications requiring high current handling and low conduction losses. Packaged in the surface mount PowerPAK (8x8L), this device supports continuous drain currents up to 460 A at a maximum drain-source voltage of 40 V. The enhancement mode channel with a 4-pin configuration enables robust switching performance.

This MOSFET is specially qualified to meet the AEC-Q101 automotive standard, demonstrating reliability in harsh automotive and industrial environments. It undergoes rigorous 100% Rg and uncontrolled avalanche (UIS) testing ensuring dependable operation under dynamic stresses. The device operates over a wide temperature range from -55°C to 175°C.

Vishay employs its TrenchFET Gen IV technology in this MOSFET to achieve very low thermal resistance and forward voltage drop (1.1 V), optimizing power efficiency. With a maximum power dissipation rating of 500 W and a low Rds(on) value of 1 milliohm, it is ideal for high-power supply circuits and motor drives.

The compact 8 mm x 8.1 mm x 1.7 mm package enhances thermal management and allows high density board layouts. Typical gate charge of 92 nC at Vgs=20 V provides controlled switching behavior beneficial for fast switching applications.

This MOSFET is suitable in industrial, automotive electronics, power management, and high current switching contexts where robustness, efficiency, and compact form factor are crucial.

This MOSFET uses Enhancement mode with a 4-pin surface mount PowerPAK package. It features a low maximum drain-source resistance of 1 milliohm ensuring efficient conduction. With a maximum power dissipation of 500 W, it supports demanding thermal loads.

Operating temperature ranges from -55°C to 175°C suit automotive and industrial environments. The device complies with the automotive standard AEC-Q101 and is 100% Rg and UIS tested. Its compact dimensions include 8 mm length, 8.1 mm width, and 1.7 mm height.

Typical gate charge is 92 nanoCoulombs at a gate-source voltage of 20 V. Forward voltage drop is 1.1 V, optimizing switching efficiency. Designed with Vishay's TrenchFET Gen IV technology for ultra-low thermal resistance.

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