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Vishay E N-Channel Power MOSFET 13 A, 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 4.6mm
Length 28.6mm
Model SIHG15N80AE-GE3
Width 15.5mm
Mount Type Through Hole
Series E
Maximum Operating Temperature 150°C
Package Type TO-247AC
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 13A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 304mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 156W
Typical Gate Charge Qg @ Vgs 35nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.2V

Key Features

  • 800 V drain-source withstand voltage for robust high-voltage operation.
  • 13 A maximum continuous drain current suitable for sustained load conditions.
  • 304 mΩ maximum drain-source resistance reduces conduction losses.
  • 156 W maximum power dissipation ensures reliable high-power handling.
  • 30 V maximum gate-source voltage compatible with common driver circuits.
  • Typical gate charge of 35 nC for balanced switching performance.
  • Operates reliably in temperatures from -55°C up to 150°C.
  • TO-247AC package supports through-hole mounting for durable industrial assembly.

Product Description

Vishay SIHG15N80AE-GE3 is a high-voltage N-channel enhancement power MOSFET optimized for power conversion and industrial control applications. It features a 13 A maximum continuous drain current and a high drain-source voltage rating of 800 V, making it suitable for demanding electrical and thermal environments where robust switching is required.

This device comes in a TO-247AC package designed for through-hole mounting, offering mechanical durability and ease of integration in industrial control panels and power modules. Its low drain-source resistance of 304 mΩ enhances efficiency by reducing conduction losses during operation.

The typical gate charge of 35 nC balances switching speed and driver energy requirements, providing efficient switching control. Its forward voltage drop of 1.2 V is indicative of low conduction loss in forward-biased conditions. The device supports gate-source voltages up to 30 V, compatible with standard driver circuits.

Operating temperature range from -55°C to 150°C allows for use in harsh thermal environments typical of industrial power converters, motor drives, switch-mode power supplies, and high-voltage testing equipment. The component is RoHS compliant, ensuring environmentally safe manufacturing practices.

800 V drain-source voltage for demanding switching applications. 13 A continuous current supports sustained heavy loads. 304 mΩ low on-resistance to minimize power losses. 156 W power dissipation rating enhances thermal handling.

Through-hole TO-247AC package enables rugged mounting. Wide temperature operation from -55°C to 150°C. Suitable for industrial power conversion and motor drives. Environmentally compliant with RoHS standards.

This Vishay MOSFET is ideal for use in industrial power converters, inverters, switch-mode power supplies, motor drive stages, and protective high-voltage circuitry. Its robust ratings and package format make it suitable for rugged industrial environments.

Explore the Electronics & Electricals section at EnvMart for more Power MOSFETs and discrete semiconductor components from Vishay and other leading manufacturers.

Vishay E N-Channel Power MOSFET 13 A, 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 13 A, making it suitable for sustained load conditions.

This MOSFET has a maximum drain-source voltage rating of 800 V, allowing for robust high-voltage operation.

It comes in a TO-247AC package designed for through-hole mounting, which supports durable industrial assembly.

The maximum power dissipation rating is 156 W, ensuring reliable high-power handling.

The typical gate charge is 35 nC, which balances switching speed and driver energy requirements.

It operates reliably in temperatures ranging from -55°C to 150°C, suitable for harsh thermal environments.

The maximum gate-source voltage for this MOSFET is 30 V, making it compatible with common driver circuits.

The maximum drain-source resistance is 304 mΩ, which helps to reduce conduction losses during operation.

The forward voltage drop is 1.2 V, indicative of low conduction loss in forward-biased conditions.

The dimensions are 28.6 mm in length, 15.5 mm in width, and 4.6 mm in height.

Yes, this model is RoHS compliant, ensuring environmentally safe manufacturing practices.

This MOSFET is suitable for applications in industrial power converters, inverters, switch-mode power supplies, and motor drive stages.

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