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DiodesZetex P-Channel Enhancement Mode MOSFET 4.2 A 20 V 6-Pin TSOT Package Surface Mount DMP2067LVT-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1mm
Length 1.8mm
Model DMP2067LVT-7
Width 1.8mm
Mount Type Surface
Series DMP2067
Maximum Operating Temperature 150°C
Package Type TSOT
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 4.2A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 65mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.2W
Typical Gate Charge Qg @ Vgs 15nC
Maximum Gate Source Voltage Vgs 8V
Forward Voltage Vf -1.4V

Key Features

  • Designed for high-efficiency power management with low on-state resistance.
  • 6-pin TSOT surface mount package suitable for compact PCB layouts.
  • Enhancement mode MOSFET channel for reliable switching performance.
  • Maximum power dissipation rating of 1.2 Watts and operating temperature up to 150°C.
  • Low typical gate charge of 15nC ensuring efficient gate drive.
  • Pin count of 6 for easy integration into electronic circuits.
  • Operates safely with a maximum gate-source voltage of 8 V and minimum temperature of -55°C.
  • Compliance with AEC-Q101 automotive standard ensures robustness for automotive applications.

Product Description

DiodesZetex DMP2067LVT-7 is a P-Channel enhancement mode MOSFET designed to deliver excellent performance for electronic components, power management, and semiconductor applications. Featuring a maximum continuous drain current of 4.2 A and a drain-source voltage rating of 20 V, it supports efficient switching with a low drain-source resistance of 65 milliohms.

This device is housed in a compact 6-pin TSOT surface mount package measuring 1.8 mm x 1.8 mm x 1 mm, suitable for dense PCB layouts. It offers reliable operation with a maximum power dissipation of 1.2 W and can operate safely at temperatures ranging from -55°C up to 150°C.

The MOSFET's low typical gate charge of 15nC allows for quick switching and reduced gate drive losses. With a gate-source voltage maximum of 8 V and a forward voltage of -1.4 V, it offers efficient and robust electrical characteristics. The DMP2067LVT-7 complies with the stringent AEC-Q101 automotive standard, making it ideal for automotive and industrial power management systems.

Applications include industrial, automotive, manufacturing electronics, power management modules, and consumer electronics where efficient, reliable MOSFET switching is required. Designed for high-efficiency power management with low on-resistance.

Compact 6-pin TSOT surface mount package fits in small circuit designs. Supports enhancement mode P-Channel MOSFET operation for precise control. Robust thermal performance with 1.2 W maximum power dissipation. Wide operating temperature range from -55°C to 150°C.

Automotive grade compliance with AEC-Q101 standard. Low gate charge for efficient switching. Suitable for industrial, automotive, and consumer electronic applications. This MOSFET is manufactured in China and is supplied as a new product. Explore more MOSFETs from DiodesZetex on EnvMart for trusted semiconductor solutions.

DiodesZetex P-Channel Enhancement Mode MOSFET 4.2 A 20 V 6-Pin TSOT Package Surface Mount DMP2067LVT-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 4.2 A.

It has a maximum drain-source voltage rating of 20 V.

The typical gate charge for this unit is 15 nC.

This model has dimensions of 1.8 mm x 1.8 mm x 1 mm.

The maximum power dissipation rating is 1.2 W.

It operates safely within a temperature range of -55°C to 150°C.

This MOSFET is housed in a 6-pin TSOT surface mount package.

It complies with the AEC-Q101 automotive standard.

The maximum gate-source voltage is 8 V.

The forward voltage is -1.4 V.

It features a P-Channel enhancement mode.

The maximum drain-source resistance is 65 milliohms.

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