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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 1.8mm |
| Model | DMP2067LVT-7 |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | DMP2067 |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.2W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | -1.4V |
DiodesZetex DMP2067LVT-7 is a P-Channel enhancement mode MOSFET designed to deliver excellent performance for electronic components, power management, and semiconductor applications. Featuring a maximum continuous drain current of 4.2 A and a drain-source voltage rating of 20 V, it supports efficient switching with a low drain-source resistance of 65 milliohms.
This device is housed in a compact 6-pin TSOT surface mount package measuring 1.8 mm x 1.8 mm x 1 mm, suitable for dense PCB layouts. It offers reliable operation with a maximum power dissipation of 1.2 W and can operate safely at temperatures ranging from -55°C up to 150°C.
The MOSFET's low typical gate charge of 15nC allows for quick switching and reduced gate drive losses. With a gate-source voltage maximum of 8 V and a forward voltage of -1.4 V, it offers efficient and robust electrical characteristics. The DMP2067LVT-7 complies with the stringent AEC-Q101 automotive standard, making it ideal for automotive and industrial power management systems.
Applications include industrial, automotive, manufacturing electronics, power management modules, and consumer electronics where efficient, reliable MOSFET switching is required. Designed for high-efficiency power management with low on-resistance.
Compact 6-pin TSOT surface mount package fits in small circuit designs. Supports enhancement mode P-Channel MOSFET operation for precise control. Robust thermal performance with 1.2 W maximum power dissipation. Wide operating temperature range from -55°C to 150°C.
Automotive grade compliance with AEC-Q101 standard. Low gate charge for efficient switching. Suitable for industrial, automotive, and consumer electronic applications. This MOSFET is manufactured in China and is supplied as a new product. Explore more MOSFETs from DiodesZetex on EnvMart for trusted semiconductor solutions.
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